Fast-electron spectroscopy of collective excitations in solids

Lucas, A. A.; Šunjić, Marijan

doi:10.1016/0079-6816(72)90002-0

Cited by 194 publications

(57 citation statements)

References 40 publications

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“…18 Our dipole model for anisotropic concentricshell fullerenes has already demonstrated its validity for simulating both optical measurements 12,19 and the van der Waals adsorption of C 60 on a surface. 20 It should therefore be applicable in the present context, although the formulation of Sec.…”

Section: Discussionmentioning

confidence: 83%

Electron-energy-loss spectroscopy of plasmon excitations in concentric-shell fullerenes

et al. 1999

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We report evidence for surface plasmon excitations in concentric-shell fullerenes. A film of these concentricshell fullerenes with radii around 5-7 nm was produced by carbon bombardment of a silver polycrystalline target and measured by electron-energy-loss spectroscopy ͑EELS͒ in reflection geometry. These data were analyzed with the help of a dielectric theory developed for EELS in transmission geometry. Taking into account the concentric-shell-substrate interaction, the spectral shape can be explained as a combination of contributions from -* interband transitions ͑around 13.5 eV͒, from the surface radial (-*) and tangential (-*) plasmons ͑around 14.5 eV and 16.7 eV, respectively͒, and from the volume plasmon ͑24.5 eV͒.

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Section: Discussionmentioning

confidence: 83%

Electron-energy-loss spectroscopy of plasmon excitations in concentric-shell fullerenes

et al. 1999

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“…The most intense HREELS band at 66 meV (532 cm" 1 ) falls near the two strongest (unresolved) IRAS lines at 527 and 577 cm" 1 . From the dielectric theory of EELS [5,6] one expects that the strongly dipole-active modes should indeed make a large contribution to the loss spectrum. However, some strength in the low-energy side of the 66-meV band is likely to be due to the Raman-active, radial-breathing mode at 496 cm -1 .…”

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confidence: 99%

High-resolution electron-energy-loss spectroscopy of thin films of C_{60} on Si(100)

et al. 1991

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We report on the first measurements by high-resolution electron-energy-loss spectroscopy of the elementary excitations of C60 thin films deposited on Si(100). By varying the primary electron energy, the spectrum extending from the far ir to the far vuv has been investigated. Many spectral features are comparable to earlier observations by photon, photoelectron, and neutron spectroscopies. New molecular excitations are revealed including the lowest electronic excitation at 1.5 eV and collective excitations at 6.3 and 28 eV.

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“…In the high-energy range (1-100 keY) it has been demonstrated that the energy-loss spectrum reflects the dielectric-loss function ofthe solid for both surface and bulk excitations. (74,161) In the low-energy range (50-200 eV) Ibach and Rowe also find the loss spectrum of a completely oxidized silicon surface to agree with the loss function calculated from optical dataY 32) Other complicating effects involve the splitting of the surface plasmon peak and the shift of loss-peak position from the transition energy of the up electron. (132) Nevertheless, as indicated in Section 4.3.2, ELS spectra show clearly defined loss peaks due to intrinsic surface states and to surface resonances in adsorbate complexes.…”

Section: Elsmentioning

confidence: 88%