Fast Differential Reflectance Spectroscopy of Semiconductor Structures for Infrared Applications by Using Fourier Transform Spectrometer

Motyka, M.; Misiewicz, J.

doi:10.1143/apex.3.112401

Cited by 22 publications

(15 citation statements)

References 17 publications

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“…The entire structure is terminated by the same GaAs 0.08 Sb 0.92 layer. In order to measure photoluminescence (PL) and photoreflectance (PR) in a wide spectral range an evacuated Fourier-transform (FT) spectrometer Bruker Vertex 80v was used and operated in step-scan mode (Firsov and Komkov 2013;Motyka et al 2009b;Motyka and Misiewicz 2010). A liquid-nitrogen cooled mercury cadmium telluride photodetector and a KBr beamsplitter were employed.…”

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confidence: 99%

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

et al. 2016

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Optical properties of AlSb/InAs/GaInSb/InAs/AlSb quantum wells (QWs) grown on an InAs substrate were investigated from the point of view of room temperature emission in the mid-and long-wavelength infrared ranges. By means of two independent techniques of optical spectroscopy, photoreflectance and temperature-dependent photoluminescence, it was proven that the main process limiting the performance of such InAs substrate-based type II structures is related to the escape of carriers from the hole ground state of the QW. Two nonradiative recombination channels were identified. The main process was attributed to holes tunneling to the valence band of the GaAsSb spacing layer and the second one with trapping of holes by native defects located in the same layer.

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confidence: 99%

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

et al. 2016

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“…The temperature resolved photoluminescence studies were performed with a continuous flow liquid helium cryostat with CaF 2 windows. For more information about the measurement setup the reader is referred to previous works (Motyka et al , 2009Motyka and Misiewicz 2010).…”

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confidence: 99%

Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells

et al. 2017

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Temperature-resolved photoluminescence studies were performed on tenselystrained AlSb/InAs/GaAsSb W-shaped type II quantum wells. They revealed two emission bands: one at lower energy of localized origin resulting from carrier trapping states at interfaces and dominates at low-temperature; and one corresponding to the fundamental optical transition in the type II quantum well. With the temperature increase to 170-200 K the low-energy emission is quenched and the high-energy band dominates and its intensity increases, indicating carrier transfer processes between the respective states at elevated temperatures. In addition, the integrated photoluminescence intensity was measured as a function of excitation power. At high excitation regime the emission intensity of the lowenergy emission band saturated, indicating low density of states, thus confirming its localized nature. The depth of the localization potential at the InAs/GaAsSb interface was determined to be 13-15 meV.

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“…Finally, it is an extremely significant factor in the case of terahertz emitters utilizing InAs doped layers (Kozub et al 2015) and also in case of mid infrared semiconductor lasers (both Quantum Cascade Lasers (QCLs) Ohtani and Ohno 2003;Teissier et al 2004 as well as Interband Cascade Lasers (ICLs) Yang 1995), where doped InAs layers are used for a plasmon-based enhancement of waveguiding properties (Tian et al 2010). The method of our choice for the determination of carrier concentrations is the Fast Differential Reflectivity (FDR) method (Motyka and Misiewicz 2010). In the paragraphs to follow we discuss it's advantages above other commonly used techniques.…”

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confidence: 99%

Non-destructive carrier concentration determination in InAs thin films for THz radiation generating devices using fast differential reflectance spectroscopy

et al. 2016

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We present a fast and robust optical method of determining carrier concentrations in heavily doped layered structures. We discuss several advantages of the technique as compared to other, more commonly applied methods using as an example InAs based devices used for THz radiation generation. Our approach leads to a more accurate estimation of doping levels in the investigated structures and aids the standard Hall measurements in precise predictions of radiative efficacy in the THz region. Predicted enhancement factors reproduce THz-Time Domain Spectroscopy (TDS) experiment results within a 2 % accuracy.

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Fast Differential Reflectance Spectroscopy of Semiconductor Structures for Infrared Applications by Using Fourier Transform Spectrometer

Cited by 22 publications

References 17 publications

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

Photoluminescence quenching mechanisms in type II InAs/GaInSb QWs on InAs substrates

Carrier transfer between confined and localized states in type II InAs/GaAsSb quantum wells

Non-destructive carrier concentration determination in InAs thin films for THz radiation generating devices using fast differential reflectance spectroscopy

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