Fast cut-off, low I2T and high temperature monolithic on-chip fuse on silicon substrate for new fail-safe embedded power switch

Abstract

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Fuse on PiN Silicon Diode Monolithic Integration for New Fail-Safe Power Converters Topologies

“…The required normalized energy to evaporate the fuse constrictions is defined by the I 2 T ([A 2 .s)]) parameter. From Table 2, we can notice that the fuses I 2 Tp parameter are very low and the difference between the theoretical and experimental values is very acceptable and some assumptions explaining the origin of this difference are explained in a previous work [7]. The pre-arcing times (Tp) are very short, making the fuses very fast in case of a short circuit occurrence.…”

“…The "Stand-alone" fuses [7] (Fig. 2) are made of a thin layer of copper (18 µm) to form the fuses constrictions and pads, electrodeposited on an insulated silicon wafer (500 µm), using a thin nitride (200 nm) layer to prevent leakage currents once the constrictions are evaporated.…”

“…Fig. 2 Stand-alone fuse designed by the authors and presented in [7] with a cutline along the constriction.…”

“…In the previous work [7], four prototypes of the "Stand-alone" fuses were designed, according to the number of the constrictions number and configurations (series/parallel). Table 2 summarizes the main electrical and geometrical parameters obtained from the electrothermal simulations based on Comsol™.…”

“…2 Finite elements simulations using Comsol™ were carried out and experimental results allowed to validate the on-state operation of the components. Fast cut-off fuses with very low pre-arcing times (4 to 6 µs) under 200 VDC bus voltage have been reported, with low leakage currents ensuring high post-arc isolating resistance (up to 8 MΩ) [7], [8]. Then, the fuses were integrated on silicon PiN diodes (Fig.…”