Fast and simple modeling of non-rectangular transistors

Layout regularity metric as a fast indicator of high variability circuits

“…When compared to TCAD, this method showed an average current error of only 1. 6% [13] and had a correlation of 0. 98 with measured transistors current [14].…”

“…The method as in [13] was used in this paper, where gate slicing method is used to compute the current of the NRG device as shown in Figure 4. Considering the non-linear effect of narrow width; the gate slicing method was modified to include an extra term which compensates for such non linear effects.…”

Modeling of Variability in Geometric Parameters of MOSFETs for DFM Applications

“…More recent works have been proposed to include the edge effect in post-lithography simulation with the STI process [7]. References [8,9] discuss the edge effects, which are manifested as an unequal distribution of drive and leakage current densities across the width of the channel.…”

“…Moreover compare the current trend which have extracted from a group of contours on a test chip with the actual silicon data measured on chip. Meanwhile use the previous methods of references [6,7] to extract the Leff to get the currents of the group of the test pattern contours comparing with the silicon data to improve that the new method is prior to the previous ones. , 27 (1) 157-162 (2010) …”

Trapezoidal approximation for on-current modeling of 45-nm non-rectilinear gate shape

“…It is known that threshold voltage (V T h ) and the current characteristics are different along the channel, which is the so-called "edge effect"-a type of inverse narrow width effect [8,9,10,11,12]. There are several factors causing the device threshold voltage to be non-uniform along the channel width, such as fringing capacitance due to line-end extension [10], dopant scattering due to shallow trench isolation (STI) edges [10], and the well proximity effect Fig.…”