Fast and low-temperature reduction of graphene oxide films using ammonia plasma

Abstract

A Raman spectroscopic investigation of graphite oxide derived graphene AIP Advances 2, 032183 (2012) Reduced graphene oxide (rGO) has been produced using an ammonia (NH 3 ) plasma reduction method. Simultaneous nitrogen doping during the reduction process enabled a rapid and low-temperature restoration of the electrical properties of the rGO. The chemical, structural, and electrical properties of the rGO films were analyzed using x-ray photoelectron spectroscopy, Raman spectroscopy, atomic force microscopy, and conductivity measurements. The oxygen functional groups were efficiently removed, and simultaneous nitrogen doping (6%) was carried out. In addition, the surface of the rGO film was flattened. Consequently, the rGO films exhibited electrical properties comparable to those prepared via other reduction methods.

Plasma Treatment of Graphene Oxide

“…The authors explain the decrease in the I D /I G ratio by the formation of an intermediate chemical species, such as hydrazine radicals. The increase can be attributed to the restoration of the sp 2 bonds in the GO sheets due to the NH 3 plasma, which is consistent with the XPS results [39]. Studies of surface morphology, carried out in the same work, are consistent with these results.…”

“…The same results were received in Refs. [39,40]. In the work of other authors [32], the concentration of pyridinic-N (48%) was found to be higher than the Pyrrolic-N (29%) and Graphitic-N (15%).…”

“…In many works, gases NH 3 [38][39][40] and N 2 [32,[41][42][43] are used to treat GO in the nitrogen containing plasma. Kim and et al for nitridation of rGO used NH 3 inductively coupled plasma with a power of 10 W at a pressure of 100 mTorr [38].…”

“…In [39] the plasma treatment with ammonia of GO and RGO in the reaction chamber with parallel plasma-enhanced chemical vapor deposition (RECVD) diodes was carried out. The conditions of plasma treatment were as follows: plasma power of 200 W at 13.56 MHz, a gas flow rate of 400 sccm, the substrate temperature 150 о C, treatment time 1-5 min.…”

In Situ Activating Strategy to Significantly Boost Oxygen Electrocatalysis of Commercial Carbon Cloth for Flexible and Rechargeable Zn‐Air Batteries

“…Finally, NH 3 plasma treatment was performed to further dope N into S‐CC, yielding N, S codoped porous CC (N, S‐CC). It is noted that NH 3 plasma could not only realize effective N doping and remove residual oxygen‐containing groups for improved electron transfer, but also etch the CC surface to engender more defect sites (Figure S3, Supporting Information), as also demonstrated in previous work . As a control, N‐doped porous CC (N‐CC) and S‐doped porous CC (S‐CC) were also prepared following similar procedures (Figure S4, see details in the Supporting Information).…”