Farbication of UV photodetector from nickel oxide nanoparticles deposited on silicon substrate by closed-field unbalanced dual magnetron sputtering techniques

Hammadi, Oday A.; Khalaf, Mohammed K.; Kadhim, Firas J.

doi:10.1007/s11082-015-0247-6

Cited by 43 publications

(5 citation statements)

References 3 publications

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“…This field causes traveling electrons to spiral along magnetic flux lines near the target instead of being attracted toward the substrate [5]. Magnetron sputtering (especially closed-field unbalanced magnetron configuration) has gained wide acceptance in both research and commercial purposes and is routinely used in different industries like cutting tools, forming tools, semiconductor, optical glass coating, decorative, biomedical, and tribology applications [6] glow discharge is simply produced by applying an electric potential on a gas sample between two electrodes placed inside a vacuum chamber .This glow discharge is a common source of plasma that can be established through an avalanche like ionization of gas neutrals at specific conditions for gas pressure and applied voltage [7]. Glow discharge plasma can generate in magnetron sputtering system, which are extensively used in various applications such as modification of surfaces [8], [9].…”

Section: Introductionmentioning

confidence: 99%

Measurement of plasma electron temperature and density by using different applied voltages and working pressures in a magnetron sputtering system

Mazhir

Khalaf²,

Taha³

et al. 2018

IJET

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This paper discusses applying different voltages and pressure in the presence of silver target and argon gas to produce plasma. Homemade dc magnetron sputtering system was used to produce glow discharge plasma. The distance between two electrodes is 4 cm. Gas used to produce plasma is argon that flows inside the chamber with flow rate 40 sccm. Intensity of spectral lines, electron temperature and electron density were studied. The results show that the intensity of spectral lines increases with the increase of the working pressure and applied voltage. Electron temperature increases by the increase of applied voltage but decreases with the increase of working pressure, while electron density decreases with the increase of applied voltage and increases with the increase of working pressure. This research demonstrates a new low cost approach to start producing high corrosion resistance materials.

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Section: Introductionmentioning

confidence: 99%

Measurement of plasma electron temperature and density by using different applied voltages and working pressures in a magnetron sputtering system

Mazhir

Khalaf²,

Taha³

et al. 2018

IJET

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“…It can be concluded that the E g of a‐IZNO increases with increasing Ni content. The increased E g values can be attributed to the fact that NiO 2 has a larger bandgap (3.6–4.0 eV) than IZO (3.14 eV in this work) …”

Section: Resultsmentioning

confidence: 64%

“…The increased E g values can be attributed to the fact that NiO 2 has a larger bandgap (3.6-4.0 eV) than IZO (3.14 eV in this work). [18] Figure 4 shows AFM images of 35 nm-thick a-IZNO thin films deposited on SiO 2 /Si substrates. It can be seen that all a-IZNO thin films have smooth, crack-free surfaces.…”

Section: Resultsmentioning

confidence: 99%

High‐Performance Thin‐Film Transistors with Nickel‐Doped Indium Zinc Oxide Channel Layers

Dong

Shao

et al. 2019

Physica Status Solidi (a)

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High‐performance thin‐film transistors (TFTs) with amorphous nickel‐doped indium zinc oxide (a‐IZNO) channel layers are fabricated by radio‐frequency magnetron sputtering. The influence of nickel (Ni)‐doping content on the electrical properties of a‐IZNO TFTs are investigated. With increasing Ni‐doping content, the threshold voltage shifts to the positive direction, which is attributed to the reduction in oxygen vacancies. The a‐IZNO TFTs at Ni content of 6.6 at% exhibit optimum performance, with a field‐effect mobility of 30.2 cm2 V−1 s−1, a threshold voltage of −1.1 V, a subthreshold swing of 0.19 V decade−1, and an on‐to‐off current ratio of 3.7 × 107. In addition, the devices show high stability under positive and negative bias stress. These results suggest that Ni is an effective carrier suppressor for indium zinc oxide (IZO) thin film, making a‐IZNO a promising channel material for TFTs.

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“…Although, the device shows a modest responsivity, spectral response of the device is limited to UV region. In an another work, NiO-Si heterojunction is fabricated for UV detection which shows good responsivity [44]. However, the device fabrication involves expensive and sophisticated sputtering technique and also the usage of silicon renders it in-appropriate for flexible applications.…”

Section: Comparison With Similar Class Of Photodetectorsmentioning

confidence: 99%

1D NiO–3D Fe₂O₃ mixed dimensional heterostructure for fast response flexible broadband photodetector

Veeralingam

Borse

et al. 2022

Nanotechnology

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Conventional heterojunction photodetectors rely on planar junction architecture which suffer from low interfacial contact area, inferior light absorption characteristics and complex fabrication schemes. Heterojunctions based on mixed dimensional nanostructures such as 0D-1D, 1D-2D, 1D-3D etc. have recently garnered exceptional research interest owing to their atomically sharp interfaces, tunable junction properties such as enhanced light absorption cross-section. In this work, a flexible broadband UV-Vis photodetector employing mixed dimensional heterostructure of 1D NiO nanofibers and 3D Fe2O3 nanoparticles is fabricated. NiO nanofibers were synthesized via economical and scalable electro-spinning technique and made composite with Fe2O3 nanoclusters for hetero-structure fabrication. The optical absorption spectra of NiO nanofibers and Fe2O3 nanoparticles exhibit peak absorption in UV and visible spectra, respectively. The as-fabricated photodetector displays quick response times of 0.09 s and 0.18 s and responsivities of 5.7 mA/W (0.03 mW/cm2) and 5.2 mA/W (0.01 mW/cm2) for UV and visible spectra, respectively. The fabricated NiO -Fe2O3 device also exhibits excellent detectivity in the order of 1012jones. The superior performance of the device is ascribed to the type-II heterojunction between NiO-Fe2O3 nanostructures, which results in the localized built-in potential at their interface, that aids in the effective carrier separation and transportation. Further, the flexible photodetector displays excellent robustness when bent over ~1000 cycles thereby proving its potential towards developing reliable, diverse functional opto-electronic devices.

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Farbication of UV photodetector from nickel oxide nanoparticles deposited on silicon substrate by closed-field unbalanced dual magnetron sputtering techniques

Cited by 43 publications

References 3 publications

Measurement of plasma electron temperature and density by using different applied voltages and working pressures in a magnetron sputtering system

Measurement of plasma electron temperature and density by using different applied voltages and working pressures in a magnetron sputtering system

High‐Performance Thin‐Film Transistors with Nickel‐Doped Indium Zinc Oxide Channel Layers

1D NiO–3D Fe₂O₃ mixed dimensional heterostructure for fast response flexible broadband photodetector

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Farbication of UV photodetector from nickel oxide nanoparticles deposited on silicon substrate by closed-field unbalanced dual magnetron sputtering techniques

Cited by 43 publications

References 3 publications

Measurement of plasma electron temperature and density by using different applied voltages and working pressures in a magnetron sputtering system

Measurement of plasma electron temperature and density by using different applied voltages and working pressures in a magnetron sputtering system

High‐Performance Thin‐Film Transistors with Nickel‐Doped Indium Zinc Oxide Channel Layers

1D NiO–3D Fe2O3 mixed dimensional heterostructure for fast response flexible broadband photodetector

Contact Info

Product

Resources

About

1D NiO–3D Fe₂O₃ mixed dimensional heterostructure for fast response flexible broadband photodetector