EuS microcrystal-embedded SiO 2 , Al 2 O 3 , and TiO 2 thin films have been prepared by using rf sputtering method. X-ray diffraction analysis indicates that EuS microcrystal is precipitated as a single phase in Al 2 O 3 and TiO 2 films while precipitation of EuS is not detected in SiO 2 film. Faraday effect attributable to the 4 f 7-4 f 6 5d transition of Eu 2ϩ in EuS microcrystalline phase is observed in Al 2 O 3 and TiO 2 films. In particular, Faraday rotation angle observed for EuS-embedded TiO 2 film is large; for instance, the magnitude of Verdet constant for as-deposited TiO 2 film prepared without heating of substrate during the sputtering is 0.15 deg/cm Oe at wavelength of 700 nm. This value is larger by two orders of magnitude than those of Eu 2ϩ-or Tb 3ϩ-containing oxide glasses which show the largest Faraday rotation angle among rare-earth-containing glasses, and is comparable to the value for EuSe single crystal.