1998
DOI: 10.1063/1.122895
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Far-infrared (λ=88 μm) electroluminescence in a quantum cascade structure

Abstract: Intersubband electroluminescence has been investigated in a quantum cascade structure based on vertical transition designed for far-infrared (λ=88 μm) emission. A narrow luminescence peak with a full width at half maximum of 0.7 meV is measured at low excitation currents (30 A/cm2) and low temperature (T=5 K). The electroluminescence efficiency exhibits a strong temperature and current dependence, consistent with an interplay between electron–electron and optical phonon scattering.

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Cited by 151 publications
(72 citation statements)
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“…[1][2][3][4][5] Confinement of such impurities in quasi-two-dimensional GaAs/Al x Ga 1Ϫx As quantum wells ͑QWs͒ allows the tuning of these levels in a controlled way. For device applications the greater range the binding energy of the impurity can be tuned over the better.…”
Section: Introductionmentioning
confidence: 99%
“…[1][2][3][4][5] Confinement of such impurities in quasi-two-dimensional GaAs/Al x Ga 1Ϫx As quantum wells ͑QWs͒ allows the tuning of these levels in a controlled way. For device applications the greater range the binding energy of the impurity can be tuned over the better.…”
Section: Introductionmentioning
confidence: 99%
“…The prototypical design for THz QCL structure proposed by Rochat et al (1998) was investigated by Köhler et al (2001), and starting from such studies, two other structures were designed. The first one is based on chirped-superlattice design concept (Tredicucci et al 1998).…”
Section: Examples Of MC Studies Of Qclmentioning
confidence: 99%
“…6,7 At present the only operational quantum cascade lasers are in the mid-infrared frequency range 8,9 but recently models have been proposed which extend the operating frequency into the far-infrared ͑FIR͒ range 10 and FIR electroluminescence has been observed in multiple quantum well devices. 11 There are difficulties with FIR intersubband devices, however, because the smaller subband separations required are of the order of the longitudinal optical ͑LO͒ phonon energy. This means that detrimental nonradiative transitions are increased, so the quantum efficiency of the device is reduced.…”
Section: Introductionmentioning
confidence: 99%