Far-infrared reflectivity−A novel tool in the investigation of the relaxation process of excess carriers in HgCdTe

Abstract

The far-infrared reflectivity spectrum of HgCdTe measured at 77 K has been studied in the region 40–220 cm−1. A new measurement has been proposed to investigate the relaxation process of excess carriers, it offers a new way of noncontact and nondestructive characterization of materials. There are no requirements for the shape, nor for the thickness of sample.

Hot phonon effects and suppressed Auger recombination on 3 $μ$m room temperature lasing in HgTe-based multiple quantum well diodes

“…Non-equilibrium temperature of electrons and holes in the QWs was calculated using the phonon lifetime τ ph = 0.9 ps which was estimated from experimental data on the phonon attenuation energy [31,47,48] The dominant mechanism of Auger recombination is a process involving two holes and one electron. A model for calculating the non-equilibrium electronic temperature due to the emission of "hot" phonons was developed.…”

Hot phonon effects and Auger recombination on 3 μm room temperature lasing in HgTe-based multiple quantum well diodes

“…The non-equilibrium temperature of electrons and holes in the QWs was calculated using the phonon lifetime τ ph ¼ 0:9 ps which was estimated from experimental data on the phonon attenuation energy. 42,59,60 At Cd 0:85 Hg 0:15 Te barrier layers bandgap of 1.15 eV (300 K), the thermalization of each electron-hole pair to the ground QW states (separated by 0.4 eV) is accompanied by the emission of more than 40 phonons with energy of 18 meV. Calculations have shown that accounting for the effect of "hot" phonons leads to an increase in the non-equilibrium temperature of charge carriers in the QW by 40-140 K at 20 A depending on the number of QWs.…”

Thin active region HgCdTe-based quantum cascade laser with quasi-relativistic dispersion law

“…where δ 2,n is the Kronecker delta, ε ∞,n is the high frequency dielectric constant, and S jn , ω TO,jn , and γ jn represent the strength, frequency, and damping constant for the jth oscillator and nth semiconductor. These parameters were taken from the works of [18] and [19] for Hg 0.6 Cd 0.4 Te and Hg 0.8 Cd 0.2 Te, respectively. When calculating plasma frequency ω 2 and damping constant γ 2 , we used the following values: the concentration and mobility of electrons in Hg 0.8 Cd 0.2 Te were equal to 10 16 cm −3 and 10 5 cm 2 /(V ■ c), respectively [20].…”