Far Infrared Measurement of the Dielectric Properties of GaAs and CdTe at 300 K and 8 K

Johnson, C. B.; Sherman, G.; Weil, R.

doi:10.1364/ao.8.001667

Cited by 112 publications

(31 citation statements)

References 23 publications

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“…We can see that, as ν is varied for the magnetic field increased from 4.3 T to 5.4 T, the observed Faraday rotation angle significantly deviates from the Drude behavior, and approaches to the quantum one. Specifically, the observed Faraday rotation angle in the low-frequency edge of 2 meV takes a nearly constant value of −6.3 mrad in the magnetic-field range between 5.2 T and 5.6 T, in accordance with the value of −4α/(1 + n sub ) = −6.3 mrad with n sub = 3.6 for the GaAs substrate [30].…”

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confidence: 73%

Optical Hall Effect in the Integer Quantum Hall Regime

Ikebe

Morimoto²,

Masutomi³

et al. 2010

Phys. Rev. Lett.

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Optical Hall conductivity σxy(ω) is measured from the Faraday rotation for a GaAs/AlGaAs heterojunction quantum Hall system in the terahertz frequency regime. The Faraday rotation angle (∼ fine structure constant ∼ mrad) is found to significantly deviate from the Drude-like behavior to exhibit a plateau-like structure around the Landau-level filling ν = 2. The result, which fits with the behavior expected from the carrier localization effect in the ac regime, indicates that the plateau structure, although not quantized, still exists in the terahertz regime.The quantum Hall effect (QHE), a highlight in the twodimensional electron gas (2DEG) system in strong magnetic fields [1][2][3][4], still harbors, despite its long history, a wealth of important physics. While static properties of the integer QHE have been well understood, we are still some way from a full understanding of dynamical responses in the QHE in the ac or even optical regime. In the static case, the states localized due to disorder with the localization length smaller than the sample size or the inelastic scattering length are crucial in realizing the quantum plateaus for the dc Hall current in a dc electric field [5][6][7][8][9][10][11]. On the other hand, the conventional wisdom for the dynamical response would be that an ac field will delocalize wave functions to make QHE disappear.For relatively low frequencies, the breakdown of QHE in ac fields has a long history of investigation [12]. One issue was whether the delocalization occurs for lowfrequencies (∼ 10 MHz), but the results were not conclusive. Subsequently, experimental study was extended to the microwave regime in the 1980s, where the delocalization as seen in the Hall conductivity σ xy was shown to be absent in the microwave (i.e., gigahertz) regime [13], while the gigahertz responses of the longitudinal conductivity σ xx [9,14,15] were explained with the scaling theory of localization [16]. Thus, a fundamental problem remains as to whether and how QHE is affected in the much higher, terahertz (closer to the optical) frequency regime (ω ∼ 10 12 Hz ∼ 10 −2 eV/h). This is an essential question, since the frequency is exactly the energy scale of interest (i.e., the cyclotron energyhω c ∼ 10 −2 eV for a magnetic field ∼ 10 T, which is the spacing between Landau levels, a prerequisite for QHE).Theoretically, the accurate quantization in QHE is firmly established as a topological (Chern) number [17] in the static case. However, such a picture may not be extended to the ac regime where the topological 'protection' no longer exists. Recently, Morimoto et al. [18] have theoretically examined the ac response of the disordered QHE systems based on the exact diagonalization method, and showed that a plateau-like behavior still exists in σ xy even in the terahertz energy range. This has motivated us to experimentally examine QHE by going beyond the microwave regime, which has so far remained a challenge. An essential experimental ingredient that enables the measurement is a recent development in t...

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supporting

confidence: 73%

Optical Hall Effect in the Integer Quantum Hall Regime

Ikebe

Morimoto²,

Masutomi³

et al. 2010

Phys. Rev. Lett.

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“…Actually, the extent of the tetrahedron deformation depends on the type of the defect. The influence of intrinsic and impurity defects on the phonon and vibrational spectra of CdTe and other semiconducting and dielectric compounds have been investigated in the past [7][8][9][10][11][12][13][14][15][16]. Also the vibrational modes induced by H atoms in Si [17,18], ZnSe [19] and GaAs [20,21] as well as the detection of hydrogen-impurity complexes in III-V materials via MIR spectrum analysis have been previously described [9].…”

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confidence: 99%

Model considerations on hydrogen distribution in hydrogenated CdTe

Zajdel

Kisiel

Robouch

et al. 2006

Journal of Alloys and Compounds

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“…2 has a bandwidth of 135 THz, from 2 to 20 μm, and is limited by the transmission of the material [14]. The spectrum contains a feature related to the 8.55 THz Raman shift in GaAs [15], which results in a Stokes peak near 16 μm.…”

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confidence: 99%

Supercontinuum generation from 2 to 20 μm in GaAs pumped by picosecond CO_2 laser pulses

et al. 2014

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We report on the generation of supercontinuum radiation from 2 to 20 μm in a 67 mm long GaAs crystal pumped by a train of 3 ps CO2 laser pulses. Temporal measurements indicate that sub-picosecond pulse splitting is involved in the production of such wide-bandwidth radiation in GaAs. The results show that the observed spectral broadening is heavily influenced by four-wave mixing and stimulated Raman scattering.

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Far Infrared Measurement of the Dielectric Properties of GaAs and CdTe at 300 K and 8 K

Cited by 112 publications

References 23 publications

Optical Hall Effect in the Integer Quantum Hall Regime

Optical Hall Effect in the Integer Quantum Hall Regime

Model considerations on hydrogen distribution in hydrogenated CdTe

Supercontinuum generation from 2 to 20 μm in GaAs pumped by picosecond CO_2 laser pulses

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