Far-infrared laser oscillation due to cyclotron emission in p-type germanium

Kuroda, Shinji; Komiyama, S.

doi:10.1007/bf01008907

Int J Infrared Milli Waves

1991

DOI: 10.1007/bf01008907

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Far-infrared laser oscillation due to cyclotron emission in p-type germanium

Shinji Kuroda

S. Komiyama

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Cited by 3 publications

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“…An enhancement of the cyclotron emission has been reported in p-type Germanium due to non equidistant light-hole Landau levels separation, however the situation is complicated due to the light hole-heavy hole mixing. 25 In graphene, the energy mismatch for Auger processes between Landau levels is…”

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confidence: 99%

Slowing hot-carrier relaxation in graphene using a magnetic field

et al. 2009

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A degenerate pump-probe technique is used to investigate the non equilibrium carrier dynamics in multi-layer graphene. Two distinctly different dynamics of the carrier relaxation are observed.A fast relaxation (∼ 50 fs) of the carriers after the initial effect of phase space filling followed by a slower relaxation (∼ 4 ps) due to thermalization. Both relaxation processes are less efficient when a magnetic field is applied at low temperatures which is attributed to the suppression of the electron-electron Auger scattering due to the non equidistant Landau level spacing of the Dirac fermions in graphene.

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Slowing hot-carrier relaxation in graphene using a magnetic field

et al. 2009

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Tuneable FIR cyclotron resonance laser in p-Ge: New aspects of the influence of the bandstructure

Unterrainer¹

1993

Phys. Scr.

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p-type Ge cyclotron-resonance laser: Theory and experiment

et al. 1993

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p-type germanium in crossed magnetic and electric fields is used as a continuously tunable laser source in the far infrared. To describe magneto-optical transitions responsible for the laser action, we use the complete version of the Pidgeon and Brown model, which accounts for the nonparabolicity and nonsphericity of the I 8 valence bands in Ge. It is demonstrated that both features are of importance in the correct assignment of the transitions. Also, the heating effects in the light-hole Landau levels are estimated theoretically. The calculations are performed for magnetic fields B~~[110] and B~~ [111]. We compare our theoretical results to experimental work in which we are able to achieve laser action in a tuning range from 28 to 76 cm ' by varying the magnetic field between 1.4 and 3.7 T. The laser output consists of a single line having a width of 0.25 cm ' and a maximum power of about 300 mW for a pulsewidth of 1 psec. Hall measurements are performed on p-type Ge samples with the same configuration as that of the laser crystals in order to determine the effective electric fields involved in the laser action. It is shown that the effective fields differ considerably from the applied fields. We conclude that the laser action, for B~~[110], at low magnetic fields (B (2.7 T) is governed by the 2-3 transition in the b set of light holes, while the action at high fields (B )2.8 T) is governed by the light-hole transition 0-1 in the same set. This agrees with estimations of the population inversion determined by other authors.

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Far-infrared laser oscillation due to cyclotron emission in p-type germanium

Cited by 3 publications

References 14 publications

Slowing hot-carrier relaxation in graphene using a magnetic field

Slowing hot-carrier relaxation in graphene using a magnetic field

Tuneable FIR cyclotron resonance laser in p-Ge: New aspects of the influence of the bandstructure

p-type Ge cyclotron-resonance laser: Theory and experiment

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