Far infrared high-performance lead telluride-based photodetectors for space-born applications

Chesnokov, S. S.; Dolzhenko, D. E.; Ivanchik, I. I.; Khokhlov, D. R.

doi:10.1016/1350-4495(94)90038-8

Cited by 38 publications

(18 citation statements)

References 14 publications

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“…A helium-cooled grid filter provided effective cutting of the incident radiation spectrum at the wavelengths ), > 18 g•i. Despite low sensitivity of the measuring electronics used, the photon flux detected in [4] was as low as N = 2.104 s1 that corresponds to NEP = 2.10-1 6 W for the detector area of 0.3.0.2 mm 2 and the operating rate 3 Hz. Direct comparison of the PbO.v 5 Sno.…”

Section: Radiometric Parametersmentioning

confidence: 99%

“…Moreover, periodical accumulation and successive fast quenching of the photosignal leads to the substantial gain in the S/N ratio with respect to the case of ordinary single photodetectors. The most efficient way of quenching of the persistent photoconductivity in Pbl-xSnTe(In) is application of strong microwave pulses to sample contacts [4]. Using this technique the long-living photoexcited free electrons may be localized for 10 gs.…”

Section: Persistent Photoconductivitymentioning

confidence: 99%

“…A laboratory model of the IR-radiometer based on Pbi 2 SnxTe(In) operating in the regime of periodical accumulation and successive fast quenching of the persistent photoconductivity, has been demonstrated in [4]. A helium-cooled grid filter provided effective cutting of the incident radiation spectrum at the wavelengths ), > 18 g•i.…”

Section: Radiometric Parametersmentioning

confidence: 99%

“…Exciting results of fundamental research on the group III -doped lead telluride -based alloys [3] provided possibilities for construction of far-infrared photodetectors based on new physical principles [4]. Results of these activities are very promising since performance of far-infrared photodetectors based on doped lead-tin tellurides is comparable or better than for analogs based on doped Ge or Si.…”

Section: Introductionmentioning

confidence: 99%

“…Therefore it became possible to operate in the regime of periodical accumulation and successive fast quenching of photoresponse. Moreover, application of microwave pulses in some special regime results in giant increment of the quantum efficiency up to-100 [4].…”

Section: Persistent Photoconductivitymentioning

confidence: 99%

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Lead telluride-based far-infrared photodetectors – a promising alternative to doped Si and Ge

2001

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Doping of the lead telluride and related alloys with the group III impurities results in appearance of unique physical features of the material, such as persistent photoresponse, enhanced responsive quantum efficiency (up to 100 photoelectrons/incident photon), radiation hardness and many others. We review physical principles of operation of the photodetecting devices based on the group III-doped IV-VI including possibilities of fast quenching of the persistent photoresponse, construction of a focal-plane array, new readout technique, and others. Comparison of performance of the state of the art Ge(Ga) and Si(Sb) photodetectors with their lead telluride-based analogs shows that the responsivity of PbSnTe(In) photodetectors is by several orders of magnitude higher. High photoresponse is detected at the wavelength 116 micrometers in PbSnTe(In), and it is possible that the photoconductivity spectrum covers all the submillimeter wavelength range.

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Section: Radiometric Parametersmentioning

confidence: 99%

Section: Persistent Photoconductivitymentioning

confidence: 99%

Section: Radiometric Parametersmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Persistent Photoconductivitymentioning

confidence: 99%

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Lead telluride-based far-infrared photodetectors – a promising alternative to doped Si and Ge

2001

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A Broadband Fluorographene Photodetector

et al. 2017

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High-performance photodetectors operating over a broad wavelength range from ultraviolet, visible, to infrared are of scientific and technological importance for a wide range of applications. Here, a photodetector based on van der Waals heterostructures of graphene and its fluorine-functionalized derivative is presented. It consistently shows broadband photoresponse from the ultraviolet (255 nm) to the mid-infrared (4.3 µm) wavelengths, with three orders of magnitude enhanced responsivity compared to pristine graphene photodetectors. The broadband photodetection is attributed to the synergistic effects of the spatial nonuniform collective quantum confinement of sp domains, and the trapping of photoexcited charge carriers in the localized states in sp domains. Tunable photoresponse is achieved by controlling the nature of sp sites and the size and fraction of sp /sp domains. In addition, the photoresponse due to the different photoexcited-charge-carrier trapping times in sp and sp nanodomains is determined. The proposed scheme paves the way toward implementing high-performance broadband graphene-based photodetectors.

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