Far-infrared conversion materials: Gallium selenide for far-infrared conversion applications

Singh, N. B.; Suhre, Dennis R.; Balakrishna, V.; Marable, M.; Meyer, R.; Fernelius, Nils C.; Hopkins, F. Kenneth; Zelmon, David E.

doi:10.1016/s0960-8974(98)00013-8

Cited by 112 publications

(63 citation statements)

References 21 publications

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“…S and Te (anions) and In (cation), generating binary isostructural compounds GaS, GaTe, and InSe, respectively, may form solid solution crystals GaSe 12x S 19,25,26,[67][68][69] , where x is the mixing ratio of the parent binary compounds. The closer the match in the atomic size of the substituting atoms, the larger the mixing ratio of solid solution crystals that may be grown with suitable optical quality, as in the following: GaSe 12x S x with x f 0.44 (11 mass.…”

Section: Specific Features Of the Grown Crystalsmentioning

confidence: 99%

“…The original e-polytype structure of GaSe is strengthened by doping; meanwhile, the physical properties responsible for the efficiency of frequency conversion and the possibility of electro-optic applications may be noticeably modified. However, due to the negative effect on optical nonlinearity of doping by sulfur, the first agent explored 24 , only a few other dopants (In, Te, Er, and Ag), in limited concentration ranges, were used until the last decade to modify further physical properties for nonlinear optical applications 19,21,25,26 . In addition, these studies are mostly related to the physical properties of the ordinary light waves.…”

Section: Introductionmentioning

confidence: 99%

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Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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In this review, we introduce the current state of the art of the growth technology of pure, lightly doped, and heavily doped (solid solution) nonlinear gallium selenide (GaSe) crystals that are able to generate broadband emission from the near infrared (IR) (0.8 mm) through the mid-and far-IR (terahertz (THz)) ranges and further into the millimeter wave (5.64 mm) range. For the first time, we show that appropriate doping is an efficient method controlling a range of the physical properties of GaSe crystals that are responsible for frequency conversion efficiency and exploitation parameters. After appropriate doping, uniform crystals grown by a modified technology with heat field rotation possess up to 3 times lower absorption coefficient in the main transparency window and THz range. Moreover, doping provides the following benefits: raises by up to 5 times the optical damage threshold; almost eliminates two-photon absorption; allows for dispersion control in the THz range independent of the mid-IR dispersion; and enables crystal processing in arbitrary directions due to the strengthened lattice. Finally, doped GaSe demonstrated better usefulness for processing compared with GaSe grown by the conventional technology and up to 15 times higher frequency conversion efficiency. INTRODUCTIONThe e-polytype of gallium selenide (hereinafter GaSe) has been known since 1934 1 and promises efficient optical frequency conversion and detection over a large range of wavelengths. The performance potential of GaSe, which belongs to the point group symmetry 6m2, can be attributed to its extreme physical properties. GaSe has a broadband transparency window over the range of 0.62-20 mm for non-polarized light continues at wavelengths o50 mm 2,3 . Other attractive physical properties of GaSe are its prodigious birefringence B 5 0.375 at l 5 10.6 mm and 0.79 at terahertz (THz) range 4 , and very high second-order nonlinear susceptibility d 22 5 54 pm V 21 at 10 mm 5 and 24.3 pm/V in the THz band 6 . Among the mid-infrared (IR) anisotropic nonlinear crystals, GaSe has the second highest optical damage threshold 7,8 and thermal conductivity in the plane of the (0001) A GaSe crystal was first used for laser frequency conversion in the mid-IR in 1972 9,10 . In subsequent years, GaSe was widely used for inlab mid-IR applications 5 . Over the past two decades, GaSe has been among the most promising nonlinear optical crystals for efficient generation of ultrabroadband radiation 0.8-5640 mm (with the

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Section: Specific Features Of the Grown Crystalsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Doped GaSe crystals for laser frequency conversion

Guo

Xie

et al. 2015

Light Sci Appl

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“…GaSe, a III-VI semiconductor, is one such compound whose fundamental properties have not been studied in detail, although it's possible applications in nonlinear optics [1], tunable THz sources [2][3], broadband THz detection [4] and radiation detectors [5][6] have been investigated. Since the early 1970's, this material has been the subject of several studies [7], but difficulties in growing large and good quality crystals limited its widespread applications.…”

Section: Introductionmentioning

confidence: 99%

Crystal Growth, Characterization and Anisotropic Electrical Properties of GaSe Single Crystals for THz Source and Radiation Detector Applications

Mandal¹

2005

AIP Conference Proceedings

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Abstract. The single crystal growth of large semi-insulating GaSe by the vertical Bridgman technique using zonerefined selenium (Se) and HP gallium (Ga) is described. The grown crystals (up to 10 cm long and 2.5 cm diameter) have been characterized thoroughly by X-ray diffraction (XRD), energy dispersive analysis by x-rays (EDAX), optical absorption/transmission, X-ray photoelectron spectroscopy (XPS), charge carrier electrical property measurements, second harmonic test, and radiation detection measurements.

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“…By varying the composition of the GaS-GaSe system, the energy gap of the complete series covers a wide range of the visible spectrum. These crystals are promising materials for the production of light emitting and optical switching devices [3,4] and photodetectors [5]. One of the determining factors in the eventual device performance of semiconductors is the presence of impurity and defect centers in the crystal.…”

Section: Introductionmentioning

confidence: 99%

Thermally stimulated currents in layered Ga4SeS3 semiconductor

Aytekin

Yuksek

Göktepe

et al. 2004

phys. stat. sol. (a)

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Thermally stimulated current (TSC) measurements are carried out on nominally undoped Ga4SeS3 layered semiconductor samples with the current flowing along the c-axis in the temperature range of 10 to 150 K. The results are analyzed according to various methods, such as curve fitting, initial rise and Chcn's methods, which seem to be in good agreement with each other. Experimental evidence is found for the presence of three trapping centers in Ga4SeS3 with activation energies of 70, 210 and 357 meV. The calculation yielded 7.9 × 10-21,7.0 × 10 -19 and 1.5 × 10-13 cm2 for the capture cross section, and 1.6 × 1010, 6.5 × 1010 and 1.2 × 1011 cm-3 for the concentration of the traps studied. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinlteim

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Far-infrared conversion materials: Gallium selenide for far-infrared conversion applications

Cited by 112 publications

References 21 publications

Doped GaSe crystals for laser frequency conversion

Doped GaSe crystals for laser frequency conversion

Crystal Growth, Characterization and Anisotropic Electrical Properties of GaSe Single Crystals for THz Source and Radiation Detector Applications

Thermally stimulated currents in layered Ga4SeS3 semiconductor

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