Far-field Imaging of Optical Second-Harmonic Generation in Single GaN Nanowires

Jp, Long; Simpkins, BS; Rowenhorst, David J.; Pe, Pehrsson

doi:10.1021/nl0624420

Cited by 105 publications

(81 citation statements)

References 20 publications

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“…To explore the underlying mechanism of TM-excited SHG enhancement, we used a two-dimensional model to calculate the average intensity (I o,ave ) of the modes excited by FW in Ag-coated and bare NWs (see Methods section and Supplementary Equation (8)). As shown in Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Another device element essential for optical circuits and other applications is a tunable source of coherent radiation, which can be obtained by utilizing the nonlinearities of the material to enable photonphoton interactions. In this nonlinear realm, second-harmonic generation (SHG), an important nonlinear process that converts an electromagnetic wave of frequency o (fundamental wave, FW) into another wave with twice the frequency (2o), has been demonstrated for ZnO, GaN, KNbO 3 , CdS, ZnTe and InP NWs [7][8][9][10][11][12] . However, these studies involved bare NWs with substantially low conversion efficiency (typically B10 À 9 W À 1 ) owing to their small intrinsic size and poor field confinement and/or spatial overlap with the material 10 .…”

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confidence: 99%

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Enhanced second-harmonic generation from metal-integrated semiconductor nanowires via highly confined whispering gallery modes

et al. 2014

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Coherent and tunable nanoscale light sources utilizing optical nonlinearities are required for applications ranging from imaging and bio-sensing to on-chip all-optical signal processing. However, owing to their small sizes, the efficiency of nanostructures even with high nonlinear coefficients is poor, therefore requiring very high excitation energies. Although surface-plasmon resonances of metal nanostructures can enhance surface nonlinear processes such as second-harmonic generation, they still suffer from low conversion efficiencies owing to their intrinsically low nonlinear coefficients. Here we show highly enhanced and directional second-harmonic generation from individual CdS nanowires integrated with silver nanocavities (41,000 times higher external efficiency compared with bare CdS), in which the lowest-order whispering gallery mode is engineered to concentrate light in the nonlinear material while minimizing Ohmic losses. The directional nonlinear signal is redirected into another waveguide, which is then utilized to configure an optical router that can potentially serve as a tunable coherent light source to enable on-chip signal processing for integrated nanophotonic systems.

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Section: Resultsmentioning

confidence: 99%

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confidence: 99%

Enhanced second-harmonic generation from metal-integrated semiconductor nanowires via highly confined whispering gallery modes

et al. 2014

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“…EBSD has been shown to be useful in the study of whiskers, nano-rods and nano-wires. EBSD has been used to characterize the growth direction of whiskers of GaN nanowires by suspending the wires in a liquid and then dispersing the liquid containing the nanowires onto a suitable substrate and allowing the liquid to evaporate (Motayed et al, 2006); (Long et al, 2007); (Motayed et al, 2007). It has also been used to characterize the growth axis of Snwhiskers .…”

Section: Introductionmentioning

confidence: 99%

Understanding and predicting metallic whisker growth and its effects on reliability : LDRD final report.

Michael¹,

Grant²,

Rodriguez³

et al. 2012

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Tin (Sn) whiskers are conductive Sn filaments that grow from Sn-plated surfaces, such as surface finishes on electronic packages. The phenomenon of Sn whiskering has become a concern in recent years due to requirements for lead (Pb)-free soldering and surface finishes in commercial electronics. Pure Sn finishes are more prone to whisker growth than their Sn-Pb counterparts and high profile failures due to whisker formation (causing short circuits) in space applications have been documented.[1] At Sandia, Sn whiskers are of interest due to increased use of Pb-free commercial off-the-shelf (COTS) parts and possible future requirements for Pb-free solders and surface finishes in high-reliability microelectronics. Lead-free solders and surface finishes are currently being used or considered for several Sandia applications. Despite the long history of Sn whisker research and the recently renewed interest in this topic, a comprehensive understanding of whisker growth remains elusive. This report describes recent research on characterization of Sn whiskers with the aim of understanding the underlying whisker growth mechanism(s).The report is divided into four sections and an Appendix. In Section 1, the Sn plating process is summarized. Specifically, the Sn plating parameters that were successful in producing samples with whiskers will be reviewed. In Section 2, the scanning electron microscopy (SEM) of Sn whiskers and time-lapse SEM studies of whisker growth will be discussed. This discussion includes the characterization of straight as well as kinked whiskers. In Section 3, a detailed discussion is given of SEM/EBSD (electron backscatter diffraction) techniques developed to determine the crystallography of Sn whiskers. In Section 4, these SEM/EBSD methods are employed to determine the crystallography of Sn whiskers, with a statistically significant number of whiskers analyzed. This is the largest study of Sn whisker crystallography ever reported. This section includes a review of previous literature on Sn whisker crystallography. The overall texture of the Sn films was also analyzed by EBSD. Finally, a short Appendix is included at the end of this report, in which the X-Ray diffraction (XRD) results are discussed and compared to the EBSD analyses of the overall textures of the Sn films. Sections 2, 3, and 4 have been or will be submitted as stand-alone papers in peer-reviewed technical journals. A bibliography of recent Sandia Sn whisker publications and presentations is included at the end of the report. 4 ACKNOWLEDGMENTS

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“…By investigating the dependence of the SH intensities on the excitation polarizations, the secondorder nonlinear susceptibility of a single CdS nanowire can be determined [20][21][22][23][24][25] . The generated SH waves from such nanowires can be analyzed by using near-field scanning optical microscopy [26] or far-field microscopic imaging [27] . Both methods are based on the detection of the back-reflected SH signal.…”

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confidence: 99%

Resonant and nonresonant second-harmonic generation in a single cadmium sulfide nanowire

Huang

Dai

et al. 2017

Chin. Opt. Lett.

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We experimentally investigate the resonant and nonresonant second-harmonic generation in a single cadmium sulfide (CdS) nanowire. The second-order susceptibility tensor is determined by analyzing the forward secondharmonic signals of the CdS nanowire. Our results show that (1) d 33 ∕d 31 ¼ −2.5 at a nonresonant input wavelength of 1050 nm; (2) d 33 ∕d 31 ¼ −1.9 at a resonant wavelength of 740 nm. The difference can be attributed to the polarization-dependent resonance.OCIS codes: 190.2620, 190.4720. doi: 10.3788/COL201715.061901.Cadmium sulfide (CdS) nanocrystals have been attracting considerable attention due to its excellent optical and electronic properties. It is a member of wide direct band gap (∼2.4 eV) semiconducting compounds and possesses large optical nonlinearities, which make it extensively useful in linear and nonlinear optoelectronic devices. In the past several years, many researchers have synthesized different CdS nanostructures, such as nanoparticles, nanoribbons, and nanowires through various growth methods [1][2][3][4][5][6][7][8] . The optical properties of such CdS nanostructures, including photoluminescence, absorption, and lasing, have been well studied [4][5][6][7][8][9][10][11][12] . Benefiting from their large second-order nonlinear response, CdS nanowires have been proven to be very useful in efficiently realizing nonlinear optical effects, such as optical correlation [13] and nonlinear optical mixing [14] . Also, the optical limiting properties of CdS nanowires were reported recently [15] . However, the secondorder nonlinear susceptibilities of a single CdS nanowire have not been well investigated.Second-harmonic (SH) generation arises from the second-order nonlinear polarization in a nonlinear optical crystal [16][17][18][19] . By investigating the dependence of the SH intensities on the excitation polarizations, the secondorder nonlinear susceptibility of a single CdS nanowire can be determined [20][21][22][23][24][25] . The generated SH waves from such nanowires can be analyzed by using near-field scanning optical microscopy [26] or far-field microscopic imaging [27] . Both methods are based on the detection of the back-reflected SH signal. Compared to the forward SH emission, the back-irradiated SH emission has a much shorter coherence length and a much lower intensity, which will reduce the quality of the SH signals and the measurement accuracy. In this work, we utilize a forward SH scattering method [28,29] , which is ideal for characterizing nanostructures with similar sizes to the wavelengths involved, to characterize the second-order susceptibility tensors of single CdS nanowires. In addition, it has been reported that the second-order nonlinear optical response of a nanowire can be significantly influenced by the resonant excitation (i.e., the SH photon energy is above the bandgap of the semiconductor nanowire) [30,31]

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Far-field Imaging of Optical Second-Harmonic Generation in Single GaN Nanowires

Cited by 105 publications

References 20 publications

Enhanced second-harmonic generation from metal-integrated semiconductor nanowires via highly confined whispering gallery modes

Enhanced second-harmonic generation from metal-integrated semiconductor nanowires via highly confined whispering gallery modes

Understanding and predicting metallic whisker growth and its effects on reliability : LDRD final report.

Resonant and nonresonant second-harmonic generation in a single cadmium sulfide nanowire

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