Failure modes and effects analysis for high-power GaN-based light-emitting diodes package technology

Horng, Ray−Hua; Lin, Re Ching; Chiang, Yi Chen; Chuang, Bing Han; Hu, Hung Lieh; Hsu, Chen Peng

doi:10.1016/j.microrel.2011.02.021

Cited by 34 publications

(11 citation statements)

References 7 publications

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“…Although the eutectic structure has a better overall heat-transfer property than the silver paste, its stability of the heat-transfer property is worse. Horng et al, [10] compared the good die attach material against the defective die attach material with gaps. The measurement result shows that due to the gap and defect the thermal resistance value increases from 0.8K/W to 4.4K/W.…”

Section: Die Attach Methodsmentioning

confidence: 99%

Heat Transfer Characteristics in High Power LED Packaging

et al. 2014

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Section: Die Attach Methodsmentioning

confidence: 99%

Heat Transfer Characteristics in High Power LED Packaging

et al. 2014

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“…62 The relationship between different thermal resistances and observed failure modes has also been studied by this group who performed detailed scanning electron microscopy of a variety of failure modes at the LED die-attach pad interfaces. 63 The reliability of high power LEDs and multichip LED modules is crucially dependent on the thermal resistance between the LED chip (or chips) and the package substrate. A good model for the thermal circuit encountered in today's high power LEDs has been described by Jong Hwa Choi and Moo Whan Shin.…”

Section: Thermal Management Of Ledsmentioning

confidence: 99%

Solid-state lighting with wide band gap semiconductors

Rahman

2014

MRS Energy & Sustainability

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Gallium nitride is currently the wide band gap semiconductor material from which almost all commercial LEDs for solid-state lighting are manufactured but in the future other promising materials, such as zinc oxide (ZnO), are also likely to play a leading role.• With further developments in LED technology, leading to cheaper luminaires, perhaps based on gallium nitride-on-silicon material, LED lamps will largely replace tungsten incandescent bulbs in the years to come. ABSTRACTLight-emitting diodes (LEDs) made from wide band gap semiconductors, such as gallium nitride, are undergoing rapid development.Solid-state lighting with these LEDs is transforming patterns of energy usage and lifestyle throughout the world.With solid-state lighting gradually taking over from incandescent and fluorescent lighting, light-emitting diodes (LEDs) are very much the focus of research nowadays. This compact review takes a look at LEDs for lighting applications made from wide band gap semiconductors.A very brief history of electric lighting is included for completeness, followed by a description of blue-emitting LEDs that serve as pump sources for all 'white' LEDs. This is followed by a discussion on techniques to extract more light from the confines of LED chips through surface patterning. The thermal management of LEDs is perhaps the most important consideration in designing and using LED-based luminaires.This topic is discussed with regard to recent studies on LED reliability. The very promising development of gallium nitride-on-silicon LEDs is examined next followed by a discussion on phosphors for color conversion in LEDs. LED lighting has positively infl uenced both upscale and downscale illumination markets worldwide. Its societal impact is examined, with the review concluding with a look at efforts to produce LEDs from zinc oxide -a material that holds much promise for the future of solid-state lighting.vacuum tube era with devices based on gas-fi lled incandescent and fl uorescent bulbs illuminating our homes and workplaces. It is only over the last two decades that solid-state light generating devices in the form of light-emitting diodes (LEDs) have become available as an alternative for lighting up living spaces. 1 , 2 This review takes a look at their development, current status, and future prospects. After a brief historical introduction, the development and structure of the blue LED at the heart of all white LEDs are examined. This is followed by a description of various techniques that have been explored to extract more light from LED chips. Such techniques make LEDs brighter without increasing their energy consumption and thus enhance their attractiveness as energy-effi cient light sources. The relatively recent development of a gallium nitride-on-silicon material for low cost, high performance LEDs is examined next, followed by a look at the phosphor technology for white LEDs.The societal impact of LED lighting is then described with this review ending by examining the still distant goal of making LEDs out of zinc ox...

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“…The output power of the TFP LEDs increased with the injection current, and, at 200 mA, no significant sign of current droop was observed. This was because, in the TFP LEDs, highly efficient light extraction was achieved through the nonshielded ITO films adopted as the n-GaN electrodes, whereas the metal wires and electrodes in the conventional VLEDs shielded the light and lowered the efficiency of light extraction, and unextracted light was absorbed and converted into heat by the epitaxial layers [8]. Fig.…”

Section: Simulation and Experimentsmentioning

confidence: 99%

Novel Electrode Design for Integrated Thin-Film GaN LED Package With Efficiency Improvement

Tsai

Lin

et al. 2013

IEEE Photon. Technol. Lett.

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This letter proposes a novel electrode structure for thin-GaN LED applications. The structure enhances light extraction and wall-plug efficiency in thin-GaN LEDs. To enhance light extraction in thin-GaN LEDs and solve current crowding effects caused by electrodes composed of metal, conventional n-GaN electrodes were replaced with ITO conductive films because of their high optical transparency. Simulation results show that the thin-GaN LEDs that use ITO as the nonshielded electrode have a more uniform current density distribution on the n-GaN surface and a higher average internal quantum efficiency than conventional metal electrodes. Furthermore, when a current of 200 mA was applied, the thin-GaN LEDs using the proposed electrode had a 40% increase in light-output power and a significant decrease in chip temperature compared to the use of conventional electrodes. The results indicate that the nonshielded ITO electrode design enhances the light extraction efficiency and avoids the accumulation of heat because of its uniform current density distribution.Index Terms-LED, nonshielding electrode, thin-film package LED (TFP LED).

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Failure modes and effects analysis for high-power GaN-based light-emitting diodes package technology

Cited by 34 publications

References 7 publications

Heat Transfer Characteristics in High Power LED Packaging

Heat Transfer Characteristics in High Power LED Packaging

Solid-state lighting with wide band gap semiconductors

Novel Electrode Design for Integrated Thin-Film GaN LED Package With Efficiency Improvement

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