Failure mechanisms of Trench IGBT under various short-circuit conditions

Benmansour, Adel; Azzopardi, Stéphane; Martin, Jean-Christophe; Woirgard, Eric

doi:10.1109/pesc.2007.4342297

Cited by 20 publications

(14 citation statements)

References 9 publications

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“…The duration of the power pulse and its maximum value are derived from the specific experimental tests in HSF condition described in the previous section. The parameters for the FEM simulations were derived from the analysis presented in [11]. The single pulse simulates an HSF operation.…”

Section: Igbt Thermal Modeling In Short Circuit Conditionsmentioning

confidence: 99%

Modeling and simulation of IGBT thermal behavior during a short circuit power pulse

Raciti

Musumeci

Cristaldi

2015

2015 International Conference on Clean Electrical Power (ICCEP)

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The thermal behavior knowledge of IGBT devices is very important to address issues related to the thermal management. Experimental measurements could provide the junction temperature of the devices in transient or steady state conditions. However, in case of short circuit, it became very difficult to get the temperatures because of the very short time in which the phenomenon happens (order of microseconds). Fortunately, thermal models represent a valid aid for the designers to predict the junction temperature but such models fail when used to study the short circuit. This paper deals with a new thermal model to address the temperature prediction in short circuit condition and it is composed by two different sub-models. The first can predict the heating phase of the phenomenon in a limited volume of the device without heat exchange, while the second is generated by taking into account a greater volume with the parameter values and physical sizes of the layers affected by the heat produced in short circuit. Index Terms-IGBT, short circuit, thermal model, hard switching fault.978-1-4799-8704-7/15/$31.00 ©2015 IEEE 542

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Section: Igbt Thermal Modeling In Short Circuit Conditionsmentioning

confidence: 99%

Modeling and simulation of IGBT thermal behavior during a short circuit power pulse

Raciti

Musumeci

Cristaldi

2015

2015 International Conference on Clean Electrical Power (ICCEP)

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“…The high power dissipation within a short time is defined as energy shock. The high short-circuit current will result in energy shock and high temperature [35,36]. However, IGBT will not immediately fail even the junction temperature exceed the rated temperature.…”

Section: ) Energy Shocksmentioning

confidence: 99%

Catastrophic failure and fault-tolerant design of IGBT power electronic converters - an overview

Blaabjerg

Wang

et al. 2013

IECON 2013 - 39th Annual Conference of the IEEE Industrial Electronics Society

172

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Reliability is one of the key issues for the application of Insulated Gate Bipolar Transistors (IGBTs) in power electronic converters. Many efforts have been devoted to the reduction of IGBT wear out failure induced by accumulated degradation and catastrophic failure triggered by single-event overstress. The wear out failure under field operation could be mitigated by scheduled maintenances based on lifetime prediction and condition monitoring. However, the catastrophic failure is difficult to be predicted and thus may lead to serious consequence of power electronic converters. To obtain a better understanding of catastrophic failure of IGBTs, the state-of-theart research on their failure behaviors and failure mechanisms is presented in this paper. Moreover, various fault-tolerant design methods, to prevent converter level malfunctions in the event of IGBT failure, are also reviewed.

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“…Therefore the shortcircuit capability is one of the validation parameter for the power semiconductor devices. Basically two kind of shortcircuit conditions are investigated: 1) the short-circuit occurs during the on-state; 2) the short-circuit condition is already present when the DUT is turned-on [9]- [10].…”

Section: Short-circuit Testermentioning

confidence: 99%

Development of a new short-circuit tester for 1.7kV high current power devices

Maresca¹,

Cardonia²,

Avallone³

et al. 2014

2014 29th International Conference on Microelectronics Proceedings - MIEL 2014

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The development of a new Short-Circuit (SC) tester for high current and high voltage power semiconductor devices is presented in this work. The proposed apparatus is provided with a Logical Control Unit (LCU) based on an FPGA digital circuit capable to control the system with 20ns programmable time resolution. The power side of the SC tester presents a series switch (SW) used to prevent undesired failure of the Device Under Test (DUT) and a 2.2mF capacitor bank designed with an optimized layout to strongly reduce parasitic stray inductance. Galvanic isolation between logical circuit and power side of the SC tester is ensured by using a custom optical fibers communication interface. Experimental measurements performed on commercial Trench-IGBTs (T-IGBTs) have confirmed the capability of the developed system to deliver high current pulses under supply voltage up to 1.7 kV.

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Failure mechanisms of Trench IGBT under various short-circuit conditions

Cited by 20 publications

References 9 publications

Modeling and simulation of IGBT thermal behavior during a short circuit power pulse

Modeling and simulation of IGBT thermal behavior during a short circuit power pulse

Catastrophic failure and fault-tolerant design of IGBT power electronic converters - an overview

Development of a new short-circuit tester for 1.7kV high current power devices

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