Failure And Yield Analysis Techniques For Readout Devices Tested In A High Throughput Automated Wafer Probing Environment

Jolivet, Noel D.; Holoien, Lee D.

doi:10.1117/12.978598

Cited by 3 publications

(3 citation statements)

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“…[1 , [4][5][6]). Here were chosen CCD-type circuits because of the possibility to realize the lower level of noise, compared to such kind of CMOS-type circuits.…”

Section: Ccd and Circuit Approachesmentioning

confidence: 99%

Readout device processing electronics for IR linear and focal plane arrays

Sizov

Derkach²,

Kononenko³

et al. 1999

SPIE Proceedings

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Silicon read-out devices with input direct injection and buffered direct injection circuits and charge coupled devices (CCD) multiplexers to be used with or ptnphotovoltaic (PV) multielement arrays were designed, manufactured and tested in T77-300 K temperature region. Into these read-out devices were incorporated the testing switches which attach the sources of direct injection transistors to the common load resistors to imitate the output signal of mercury cadmium telluride (MCT) photodiodes. The silicon read-out devices for 2x64 n-p-or p+-n.. linear arrays and 2x4x 128(144) time delay and integration (TDI) arrays with skimming and partitioning functions were manufactured by n-or p-channel MOS teclmology with buried channel CCD register. The designed CCD readout devices are driven with four-or two-phase clock pulses.

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“…[1 , [4][5][6]). Here were chosen CCD-type circuits because of the possibility to realize the lower level of noise, compared to such kind of CMOS-type circuits.…”

Section: Ccd and Circuit Approachesmentioning

confidence: 99%

Readout device processing electronics for IR linear and focal plane arrays

Sizov

Derkach²,

Kononenko³

et al. 1999

SPIE Proceedings

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“…There are several possible main types of architecture and circuit approaches for readout electronics (see, e.g., [1,[4][5][6]). We chose CCD-type circuits because of the lower level of noise as compared with their CMOS-type analogues.…”

Section: Ccd and Circuit Approachesmentioning

confidence: 99%

“…Testing the wafer-located chips [6] is of an independent interest, as it allows appraising the yield prior hybridization. For the purging purposes, a construction of testing circuits was designed and incorporated into the readout devices.…”

mentioning

confidence: 99%

IR sensor readout devices with source input circuits

Сизов¹

1999

Semicond. Phys. Quantum Electron. Optoelectron.

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High performance IR imaging systems for, e. g., surveillance and reconnaissance applications, are currently basically include focal plane arrays (FPAs) with multielement scanning or staring two-dimensional matrix of PV detectors cooled down to cryogenic temperatures with a signal processor. The FPA technologies mainly include two major technologies, hybrid and monolithic. The concept of the IR FPA hybrid technology is widespread as it permits separate optimization of the parameters of the detector array with a large number of sensitive elements and typical silicon readout device coupled with the detector array [1]. The major hybrid technology uses mercury-cadmium-telluride (MCT) PV detectors and silicon CCD or CMOS chips [1, 2] for readout and multiplexing of the stored charge from the detectors; there are a lot of various designs of such interface but practically they are the source coupling or gate coupling ones [3-5]. Performance requirements for IR FPAs are considerably varied with respect to the wavelength region, background photon radiation, operating temperature, dynamic range, noise, readout rate, power dissipation, detector biases, and some other parameters. IR FPAs are mainly clustered in atmospheric window wavelength ranges 1-2.5, 3-5, 8-12 µm, and depending on the wavelength region applied, they are aimed at T ≈ 250300, 77150, 2090 K operating temperatures, respectively. The primary function of a readout device for IR arrays is to provide an IR detector charge to voltage conversion, integration of the electrons generated in photodetector, preliminary signal processing, e.g., skimming, partitioning, amplification and time multiplexing of signals from the cooled detectors in the array [4] to much less number of outputs. In the case of scanning systems, TDI function should be used to improve performance of

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