Factors influencing the properties of fluoropolymer-based resists for 157-nm lithography

Taylor, G.W.; Xu, Cheng-Bai; Teng, Gary; Leonard, JoAnne; Szmanda, Charles R.; Lawrence, W. G.; Nur, Sassan; Brown, K. W.; Stephen, Al

doi:10.1117/12.474261

Cited by 4 publications

(3 citation statements)

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“…We [3] and others [9,10] have reported imaging results with TFE copolymers with optical absorbances in the range of 2.0 µm"1, or slightly lower, based upon terpolymers composed of TFE, hexafluoroisopropanol-functionalized NB, and a protected acid-labile carboxylate ester. Here we will describe some of those results, and then several recent imaging results with resists having formulated absorbances as low as 1.4 µm"1.…”

Section: Resist Contrast and Imaging 321 Tfe Terpolymersmentioning

confidence: 99%

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Fluoropolymers for 157 nm Lithography: Performance of Single Layer Resists.

Crawford

Farnham

Feiring

et al. 2002

J. Photopol. Sci. Technol.

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Implementation of 157 nm lithography using single-layer photoresists will require the development of resists with sufficiently high transparency in the vacuum ultraviolet to permit high resolution imaging using films approximately 200 nm thick. One of the more promising approaches to this objective involves the use of fluoropolymers as the base resins in the photoresists, since fluorination decreases the optical absorbance at 157 nm. Here we describe the optical properties and imaging performance of two fluoropolymer systems. One system is based upon tetrafluoroethylene copolymers, the other upon vinyl addition copolymers. Both systems incorporate norbornene derivatives to provide aqueous base (developer) solubility and plasma etch resistance.

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Section: Resist Contrast and Imaging 321 Tfe Terpolymersmentioning

confidence: 99%

“…Reported values for A have decreased from values in excess of 3.0 µm' [4], to values which are currently less than 2.0 µm 1 for formulated resists [8,9]. Very recently values below 1.0 µm 1 for formulated resists have been reported [10].…”

Section: Introductionmentioning

confidence: 99%

Fluoropolymers for 157 nm Lithography: Performance of Single Layer Resists.

Crawford

Farnham

Feiring

et al. 2002

J. Photopol. Sci. Technol.

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“…An additional condition necessary to achieve high transparency is that the fluorine be incorporated with some degree of alternation in the polymer backbone to eliminate, or at least minimize, electronic delocalization (conjugation) along the polymer chain 11 . In order to incorporate a large amount of fluorine, with alternation, we have chosen to use TFE as a comonomer in our resins 4,[12][13][14] . Here we report the properties of a family of TFE terpolymer resists with optical absorbance below 1.5 µm -1 .…”

Section: Introductionmentioning

confidence: 99%

Single layer fluropolymer resists for 157-nm lithography

Crawford

Farnham

Feiring

et al. 2003

Advances in Resist Technology and Processing XX

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We have developed a family of 157 nm resists that utilize fluorinated terpolymer resins composed of 1) tetrafluoroethylene (TFE), 2) a norbornene fluoroalcohol (NBFOH), and 3) t-butyl acrylate (t-BA). TFE incorporation reduces optical absorbance at 157 nm, while the presence of a norbornene functionalized with hexafluoroisopropanol groups contributes to aqueous base (developer) solubility and etch resistance. The t-butyl acrylate is the acid-catalyzed deprotection switch that provides the necessary contrast for high resolution 157 nm imaging. 157 nm optical absorbances of these resists depend strongly upon the amount of t-BA in the polymers, with the TFE/NBFOH dipolymers (which do not contain t-BA) exhibiting an absorbance lower than 0.6 µm -1 . The presence of greater amounts of t-BA increases the absorbance, but also enhances the dissolution rate of the polymer after deprotection, yielding higher resist contrast. Formulated resists based upon these fluorinated terpolymer resins have been imaged at International Sematech, using the 157 nm Exitech microstepper with either 0.6 NA or 0.85 NA optics. We have carefully explored the relationship between imaging performance, resist contrast, optical absorbance, and t-BA content of these terpolymer resist resins, and describe those results in this contribution.

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Fluoropolymers for 157 nm single-layer resists

Toriumi

Ishikawa

Kodani

et al. 2003

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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Tetrafluoroethylene-based copolymers with functionalized norbornenes were synthesized using a hydrocarbon and hydrofluorocarbon initiators and their fundamental properties, such as transparency at 157 nm and solubility in a standard alkaline developer were characterized. A high transparency, i.e., absorbance of less than 0.5 m Ϫ1 , and the increase of the dissolution rate in the standard alkaline developer were achieved. Positive-working resists formulated by the fluororesins were developed and showed fine patterns of 60 nm dense lines and spaces delineated by the exposure at 157 nm wavelength.

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Factors influencing the properties of fluoropolymer-based resists for 157-nm lithography

Cited by 4 publications

References 0 publications

Fluoropolymers for 157 nm Lithography: Performance of Single Layer Resists.

Fluoropolymers for 157 nm Lithography: Performance of Single Layer Resists.

Single layer fluropolymer resists for 157-nm lithography

Fluoropolymers for 157 nm single-layer resists

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