2006
DOI: 10.1109/tdei.2006.1714938
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Factors governing ferroelectric switching characteristics of thin VDF/TrFE copolymer films

Abstract: A series of ferroelectric switching measurements are performed on the 75/25mol% vinylidene fluoride /trifluoroethylene copolymer thin films with various structures to elucidate the factors governing the switching characteristics of such films. It is shown that the spin-coated and well-annealed samples exhibit a remanent polarization P r of 85 mC/m 2 . Unlike that in previous reports, the switching time τ s of these samples is independent of thickness down to 50 nm if Au electrodes are used instead of Al electr… Show more

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Cited by 46 publications
(55 citation statements)
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“…The device with d s ¼ 60 nm (red curve) exhibits a P r of B7.5 mC cm À 2 . Both values are quite close to the literature data [32][33][34] . However, compared with the J-V curve, it is difficult to distinguish the ferroelectric switching for peaks 1, 3, 4 and 6 with small amplitudes in the P-V curve.…”
Section: Resultssupporting
confidence: 91%
“…The device with d s ¼ 60 nm (red curve) exhibits a P r of B7.5 mC cm À 2 . Both values are quite close to the literature data [32][33][34] . However, compared with the J-V curve, it is difficult to distinguish the ferroelectric switching for peaks 1, 3, 4 and 6 with small amplitudes in the P-V curve.…”
Section: Resultssupporting
confidence: 91%
“…39 This mechanism entails a strong effect of the chain azimuthal orientation on the anisotropy of the domain wall velocity.…”
mentioning
confidence: 99%
“…4 P-E loops of inorganic ferroelectric films usually shows typical rounded shape, while ferroelectric polymer films do display square-like P-E loops. 17 Third is the charge compensation at P(VDF-TrFE)/semiconductor interface. When accumulation voltage is applied, majority carriers accumulate at P(VDF-TrFE)/semiconductor interface.…”
Section: Resultsmentioning
confidence: 99%