Factors affecting the <i>f</i> × <i>Q</i> product of 3C-SiC microstrings: What is the upper limit for sensitivity?

Kermany, Atieh Ranjbar; Bennett, James S.; Brawley, George A.; Bowen, Warwick P.; Iacopi, Francesca

doi:10.1063/1.4941274

Cited by 14 publications

(19 citation statements)

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“…2,3 This can be due to the unique properties of 3C-SiC material, such as wide bandgap, high breakdown electric field strength, and high saturated electron drift velocity. 4 With a bandgap value of 2.4 eV, which is twice of that of Si, 3C-SiC based NEMS can be operated in high temperature environments of more than 500…”

mentioning

confidence: 99%

A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition

Liu

Guo

Shen

et al. 2016

ECS J. Solid State Sci. Technol.

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Although epitaxial growth of Si films on both surfaces of silicon wafer (epi-Si/Si-wafer/epi-Si) can be realized in foundry by means of mounting certain amounts of silicon wafers in a boat in commercial specialized chemical vapor deposition equipment (s-CVD), for its counterpart epi-SiC/Si-wafer/epi-SiC, neither is it readily realized in s-CVD, nor is it easily achieved in conventional chemical vapor deposition equipment (c-CVD) which is generally used for growth of 3C-SiC on single surface of silicon wafer (epi-SiC/Si-wafer). Since the growth of epi-SiC/Si-wafer/epi-SiC in one run is more efficient, and is anticipated, in this work, we demonstrated a facile method for growth of epi-SiC/Si-wafer/epi-SiC in c-CVD. The Si wafer was double-side polished and mounted in a suspension mode on the susceptor in the c-CVD chamber. It was found that homogeneous 3C-SiC(100) films were heteroepitaxially grown on both surfaces of the suspended Si(100) wafer simultaneously. The structural and electrical properties of the obtained 3C-SiC films on both surfaces were investigated by means of SEM, XRD, Raman and J-V measurements. Results showed that each film was uniform and continuous, with same trend of slight degradation from the inner to the outer region of the wafer. This indicated a possible way of making mass production of high quality 3C-SiC films on Si wafers in one run in c-CVD for the potential applications such as sensors, with working principle based on voltage drop difference of two back-to-back diodes on epi-SiC/Si-wafer/epi-SiC, or graphene growth from epi-SiC/Si-wafer/epi-SiC templates.

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mentioning

confidence: 99%

A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition

Liu

Guo

Shen

et al. 2016

ECS J. Solid State Sci. Technol.

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“…This is a desirable property in a number of situations, most notably in quantum-limited position and force sensing [95], where the 2.3. UNRESOLVED SIDEBAND LIMIT 25 standard quantum limit 4 can be approached in the 'bad-cavity' regime [36,70]. A strongly-overcoupled cavity also assists in permitting broadband sensor operation with high quantum efficiency (high escape efficiency η esc , Eqn (2.6)), both of which are crucial for many applications.…”

Section: Unresolved Sideband Limitmentioning

confidence: 99%

“…This implies that squeezed states are 'classical', in the sense that one can construct a local hidden variable theory that explains the statistics of quadrature measurements [194]. We are thus led to consider that there may be different 'degrees' of nonclassicality, beginning with ill-behaved P GS and increasing towards the violation of Bell and Bell-type inequalities 4 .…”

Section: Chapter 3 Tools Of the Tradementioning

confidence: 99%

“…The most intuitive filter yielding a force proportional to −p M is a low-pass differentiator circuit 4 with bandwidth ∆ω FB ω M [209]; such a filter is near-optimal 5 in the limit that the optomechanical coupling is sufficiently high 6 , in that the controlled state asymptotically approaches the ground state for appropriate choice of gain, cf. § 4.3.1.…”

Section: Modelling Cold Dampingmentioning

confidence: 99%

“…3 In fact, the Wigner function is a Gaussian convolution of the P function with the vacuum noise [50]. 4 Obviously this requires a multi-mode description.…”

Section: Chapter 3 Tools Of the Tradementioning

confidence: 99%

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Quantum optomechanics in the unresolved sideband regime

Bennett¹

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A cavity optomechanical system is formed when the resonance frequency of an optical cavity is dependent upon the position of a mechanical oscillator. This is achieved in a plethora of physical systems, spanning the range from cold atom clouds trapped in miniaturised optical cavities through to the kilogram-scale test masses of the four kilometre long advanced Laser Interferometer Gravitationalwave Observatory. The dynamical coupling between light and vibration thus engendered modifies both the optical and mechanical behaviours, and is responsible for a number of intriguing phenomena.Indeed, with optomechanical tools it becomes possible to observe the fact that macroscopic mechanical oscillators are governed by the laws of quantum mechanics, rather than familiar classical equations of motion. The preparation of mechanical oscillators in truly quantum states, such as squeezed states and two-mode entangled states, has already been experimentally demonstrated. It is predicted that further advances along these lines will permit sensitive tests of fundamental physics, in addition to delivering significant improvements to sensor and information processing technologies.The majority of optomechanical protocols developed to date operate in the so-called resolved sideband limit, where the cavity bandwidth is small compared to the mechanical resonance frequency.This ensures that the optical cavity may be employed as a frequency-selective element for performing coherent control, but it also limits the quantity of circulating optical power and prevents one from reaching the standard quantum limit for position and force detection.In this thesis we report research that has expanded the optomechanical toolbox in the unresolved sideband regime, where the linewidth of the cavity is larger than the mechanical resonance frequency. This is a natural operating regime for large-mass and/or low-frequency mechanical oscillators; microcavity devices with small mode volumes and large optomechanical coupling rates; high-bandwidth, high-quantum-efficiency position and force detection; optical pulse manipulation; and hybrid devices couple to low-frequency quantum ancillae, such as the motional degrees of freedom of cold atoms.We begin this thesis by providing introductory material which covers advances in optomechanics and related fields; useful theoretical tools and their physical meanings; and some insights into technical details. These materials are included in the hope that they might be useful to other researchers in the field.Our first contribution to optomechanics in the unresolved sideband regime is a theoretical study of a remotely-coupled hybrid atom-optomechanical system. This uses a cloud of cold atoms as a 'quantum handle' with which to control the state of a mechanical oscillator. The two systems are coupled via light, which significantly relaxes experimental requirements on integration of vacuum and cryogenic apparatus. We derive the conditions under which laser cooling of the atomic ensemble permits one to sympathetica...

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Nanomechanical Dissipation and Strain Engineering

Sementilli

Romero

Bowen

2021

Adv Funct Materials

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Nanomechanical resonators have applications in a wide variety of technologies ranging from biochemical sensors to mobile communications, quantum computing, inertial sensing, and precision navigation. The quality factor of the mechanical resonance is critical for many applications. Until recently, mechanical quality factors rarely exceeded a million. In the past few years however, new methods have been developed to exceed this boundary. These methods involve careful engineering of the structure of the nanomechanical resonator, including the use of acoustic bandgaps and nested structures to suppress dissipation into the substrate, and the use of dissipation dilution and strain engineering to increase the mechanical frequency and suppress intrinsic dissipation. Together, they have allowed quality factors to reach values near a billion at room temperature, resulting in exceptionally low dissipation. This review aims to provide a pedagogical introduction to these new methods, primarily targeted to readers who are new to the field, together with an overview of the existing state‐of‐the‐art, what may be possible in the future, and a perspective on the future applications of these extreme‐high quality resonators.

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Factors affecting the f × Q product of 3C-SiC microstrings: What is the upper limit for sensitivity?

Abstract: Articles you may be interested inMicroresonators with Q-factors over a million from highly stressed epitaxial silicon carbide on silicon Appl. Phys. Lett. 104, 081901 (2014); 10.1063/1.4866268Stress-based resonant volatile gas microsensor operated near the critically buckled state

Cited by 14 publications

References 76 publications

A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition

A Facile Method for Heteroepitaxial Growth of Homogeneous 3C-SiC Thin Films on Both Surfaces of Suspended Si Wafer by Conventional Chemical Vapor Deposition

Quantum optomechanics in the unresolved sideband regime

Nanomechanical Dissipation and Strain Engineering

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