2015
DOI: 10.1039/c4mh00156g
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Factors affecting bismuth vanadate photoelectrochemical performance

Abstract: Bismuth vanadate is a promising photoanode material, but recent reports on undoped BiVO 4 without sublayers and co-catalysts showed large variations in photocurrent generation. We addressed this issue by correlating photoelectrochemical performance with physical properties. We devised a novel anodic electrodeposition procedure with iodide added to the aqueous plating bath, which allowed us to prepare BiVO 4 photoanodes with virtually identical thicknesses but different morphologies, and we could control surfac… Show more

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Cited by 42 publications
(42 citation statements)
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“…BiVO 4 is known to suffer from poor electron mobility, and photon efficiency is therefore lost relatively easily to electron-hole recombination [33,34]. This phenomenon is reportedly due to the fact that the VO 4 tetrahedra are not connected to each other [35], thus making it hard for photogenerated electrons to flow towards the conducting support.…”
Section: Disadvantages Of Bivo 4 As a Photoanodementioning
confidence: 96%
“…BiVO 4 is known to suffer from poor electron mobility, and photon efficiency is therefore lost relatively easily to electron-hole recombination [33,34]. This phenomenon is reportedly due to the fact that the VO 4 tetrahedra are not connected to each other [35], thus making it hard for photogenerated electrons to flow towards the conducting support.…”
Section: Disadvantages Of Bivo 4 As a Photoanodementioning
confidence: 96%
“…Our results agree with previous reports that conclude on the basis of XPS data that the BVO surface tends to be significantly vanadium deficient. 24,51,55,77,78 Table 2). The XPS and EDS data are consistent with a bismuthrich, vanadium-deficient surface layer on otherwise stoichiometric BVO grains.…”
mentioning
confidence: 99%
“…The performance of photoelectrodes is not just governed by sunlight absorption, but band edge positions of the material in contact with the liquid electrolyte, material conductivity, carrier lifetimes, and charge recombination processes also matter; structure size critically affects the probability of a photogenerated carrier to reach the photoelectrode-electrolyte interface. [9,16] Since photocurrent generation of complex semiconductors depends on many factors, [46] simple correlations are rarely found, especially when comparing different materials as in this work. Table 1 for nomenclature.…”
Section: Articlementioning
confidence: 99%
“…[46] The incident photon flux was equivalent to 1 sun illumination, as verified by a calibrated Si photodiode (Thorlabs). We used three electrodes per material and observed good reproducibility.…”
Section: Articlementioning
confidence: 99%
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