Factor analysis and superposition of Auger electron spectra applied to room temperature oxidation of Ni and NiCr21Fe12

Hofmann, S.; Steffen, J.

doi:10.1002/sia.740140113

Cited by 80 publications

(8 citation statements)

References 17 publications

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“…The factor analysis method is wellestablished and described in the literature. 38,39 The spectra taken during the depth profiles described above formed a data matrix that was treated by PHI-Matlab software. The number of pure spectra necessary to reconstruct the original profile was estimated using the indicator (IND) function.…”

Section: The Fe/si Interface Compositional Quantification By Reelsmentioning

confidence: 99%

Variation of the electron inelastic mean free path during depth profiling of the Fe/Si interface as determined by quantitative REELS

Prieto

Hofmann

Elizalde

et al. 2004

Surface & Interface Analysis

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The aim of this work is to determine the dependence of the electron inelastic mean free path (IMFP) at the Fe/Si interface during depth profiling by sputtering with 3 keV Ar + ions. In order to estimate the variation of the IMFP at the interface, reflection electron energy-loss spectroscopy (REELS) measurements were performed after different sputtering times at the Fe/Si interface with three different primary electron energies (i.e. 0.5, 1 and 1.5 keV). Even though it is highly likely that a compound (i.e. Fe x Si) is formed at the interface, all the experimental REELS spectra could be analysed as a linear combination of those corresponding to pure Si and Fe. Using the model developed by Yubero and Tougaard for quantitative analysis of these REELS spectra we could estimate the IMFP values along the depth profile at the interface. The resulting IMFPs are observed to vary linearly with the average composition (as determined by REELS) at the Fe/Si interface as it is sputter depth profiled. The energy dependence of the IMFP for different compositions is presented and discussed. For completeness, we have determined the energy-loss functions as well as the IMFPs of the pure elements (i.e. Fe and Si).

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Section: The Fe/si Interface Compositional Quantification By Reelsmentioning

confidence: 99%

Variation of the electron inelastic mean free path during depth profiling of the Fe/Si interface as determined by quantitative REELS

Prieto

Hofmann

Elizalde

et al. 2004

Surface & Interface Analysis

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“…The successful use of these two techniques has been demonstrated readily for several different systems. 6,7,11 These are common features in commercial evaluation software such as the PHI Multipak 6.0 used in this study.…”

Section: Resultsmentioning

confidence: 99%

Quantitative AES depth profiling of iron and chromium oxides in solid solution, (Cr_1−xFe_x)₂O₃

Asteman

Norling

Svensson

et al. 2002

Surface & Interface Analysis

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“…[20][21][22] Principal component analysis showed that, starting from the end of the depth profile and moving towards its beginning, only two relevant factors are present up to the 7th spectrum, beyond which a third factor starts to appear. Two real factors present here are expected to be elemental Si and SiO, ,23 the latter coming into play when approaching the interface.…”

Section: Target Transformationmentioning

confidence: 98%

Auger depth profiling of silicon dioxide on silicon: A factor analysis study

Sarkar

Calliari

Gonzo

et al. 1993

Surface & Interface Analysis

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An Auger sputter profile across the SiOz/Si interface is analysed by means of factor analysis (FA). As compared to conventional treatments of Auger data, more information is obtained in this way. In particular, the L,,,VV spectrum and the depth distribution of silicon atoms in an oxygen-deficient situation with respect to the silicon dioxide stoichiometry are provided, thereby allowing a closer insight into the chemistry of this system.

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Factor analysis and superposition of Auger electron spectra applied to room temperature oxidation of Ni and NiCr21Fe12

Cited by 80 publications

References 17 publications

Variation of the electron inelastic mean free path during depth profiling of the Fe/Si interface as determined by quantitative REELS

Variation of the electron inelastic mean free path during depth profiling of the Fe/Si interface as determined by quantitative REELS

Quantitative AES depth profiling of iron and chromium oxides in solid solution, (Cr_1−xFe_x)₂O₃

Auger depth profiling of silicon dioxide on silicon: A factor analysis study

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Factor analysis and superposition of Auger electron spectra applied to room temperature oxidation of Ni and NiCr21Fe12

Cited by 80 publications

References 17 publications

Variation of the electron inelastic mean free path during depth profiling of the Fe/Si interface as determined by quantitative REELS

Variation of the electron inelastic mean free path during depth profiling of the Fe/Si interface as determined by quantitative REELS

Quantitative AES depth profiling of iron and chromium oxides in solid solution, (Cr1−xFex)2O3

Auger depth profiling of silicon dioxide on silicon: A factor analysis study

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Quantitative AES depth profiling of iron and chromium oxides in solid solution, (Cr_1−xFe_x)₂O₃