2014
DOI: 10.1016/j.jscs.2014.02.005
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Facile synthesis of flat crystal ZnO thin films by solution growth method: A micro-structural investigation

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Cited by 101 publications
(37 citation statements)
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“…The value of D increases with increase of annealing temperature. The dislocation density, lattice strain, micro strain, and stacking fault for the present series samples are extracted from d = 1/D 2 (Sathyamoorthy et al 2006;Sharma et al 2011;Touati et al 2014;Bindu and Thomas 2014), e = b/ 4 9 tanh (Thool et al 2014), e = b 9 cosh/4 (Sathyamoorthy et al 2006;Sharma et al 2011) and SF = 2p 2 /45H(3tanh) (Touati et al 2014;Thool et al 2014), respectively, and their values are given in Table 1. From Table 1 we notice that the dislocation density, lattice strain, micro strain, and stacking fault for the annealed samples decrease with the increase of annealing temperature.…”
Section: Resultsmentioning
confidence: 99%
“…The value of D increases with increase of annealing temperature. The dislocation density, lattice strain, micro strain, and stacking fault for the present series samples are extracted from d = 1/D 2 (Sathyamoorthy et al 2006;Sharma et al 2011;Touati et al 2014;Bindu and Thomas 2014), e = b/ 4 9 tanh (Thool et al 2014), e = b 9 cosh/4 (Sathyamoorthy et al 2006;Sharma et al 2011) and SF = 2p 2 /45H(3tanh) (Touati et al 2014;Thool et al 2014), respectively, and their values are given in Table 1. From Table 1 we notice that the dislocation density, lattice strain, micro strain, and stacking fault for the annealed samples decrease with the increase of annealing temperature.…”
Section: Resultsmentioning
confidence: 99%
“…where h, k and l are Miller indices denoting the structure's plane [17,20]. The d values for AZO films were determined as 0.260 nm for n-Si(111) and 0.261 nm for glass substrates.…”
Section: Figurementioning
confidence: 99%
“…The d values for AZO films were determined as 0.260 nm for n-Si(111) and 0.261 nm for glass substrates. Using the (002) reflection, the d value for single crystal ZnO is 0.260 nm [20].…”
Section: Figurementioning
confidence: 99%
“…Zinc oxide (ZnO), due to its excellent semiconducting and gas sensing properties and photocatalytic and antibacterial activities, is an important material for photovoltaic cells (Rensmo et al., 1997;Bauer et al, 2001;Thool et al., 2014), optoelectronic devices (Tennakone et al, 1999;Zhang et al, 2002;Govender et al, 2002) and sensors (Dong et al, 1997;Gupta, 1990;Henning et al, 1990;Chaturvedi et al, 2012). The recent bias has been shifted towards the investigation of ZnO at nano-scale.…”
Section: Introductionmentioning
confidence: 99%