2014
DOI: 10.1016/j.mssp.2014.06.008
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Facile synthesis and transformation of Te nanorods to CdTe nanoparticles

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Cited by 8 publications
(2 citation statements)
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“…This means that the transition from CB for CdS to HOMO for poly-TPD does not happen because of the increase of the diffusion current for poly-TPD but the exciplex generation increases [24]. The peak 407nm of the poly-TPD/CdSNPs/Alq3 spectrum corresponds to TPD emission due to the fact that those peaks' energy equals TPD's band gap which is 3eV; this energy gap value was calculated using the EL wavelength peak (E = 1240/λ) [25]. The 407nm peak appears when using NPs where Auger-assisted energy that results from the nano-sized materials results in causing high Auger recombination cross section.…”
Section: Electroluminesces (El) Measurementmentioning
confidence: 99%
“…This means that the transition from CB for CdS to HOMO for poly-TPD does not happen because of the increase of the diffusion current for poly-TPD but the exciplex generation increases [24]. The peak 407nm of the poly-TPD/CdSNPs/Alq3 spectrum corresponds to TPD emission due to the fact that those peaks' energy equals TPD's band gap which is 3eV; this energy gap value was calculated using the EL wavelength peak (E = 1240/λ) [25]. The 407nm peak appears when using NPs where Auger-assisted energy that results from the nano-sized materials results in causing high Auger recombination cross section.…”
Section: Electroluminesces (El) Measurementmentioning
confidence: 99%
“…Among the II-VI semiconductor quantum dots (QDs), cadmium telluride (CdTe) is one of the most attractive candidates because of their size-dependent emission in a visible region and high photoluminescence (PL) quantum yield (QY) [7] The size-dependent properties make it especially suitable as building blocks for light-emitting diodes [8,9], photovoltaics [10,11], photonic crystals and bio-imaging [12,13], biological and chemical sensor applications [14,15], etc. Unlike other II-VI compound materials, CdTe can be prepared in both n-type and p-type conductivities [16,17], hence the facile route making of diode and field effect transistors possible. This permits the fabrication of solar cells in both homojunction and heterojunction configuration.…”
Section: Introductionmentioning
confidence: 99%