Facile synthesis and optical properties of pure and Ni²⁺, Co²⁺, Bi³⁺, Sb³⁺substituted Cu₃SnS₄

Abstract

Reacting thiourea precursors of the respective metals in ethyleneglycol for few hours, orthorhombic Cu3SnS4 and Ni2+, Co2+ and Sb3+ substituted quaternary compositions has been synthesised and characterized thoroughly.

Morphological evolution of carnation flower-like Cu2CoSnS4 battery-type electrodes

“…The band observed at 369 nm is ascribing due to the Co 2+ ion in the tetrahedral coordination with Sulphur (Fig. 1(e)) and definitely confirms the addition of Cu-Co-Sn-S [39,40]. 3d).…”

Regulation of the Crystal Structure Leading to the Bandgap Widening and Phonon Scattering Increasing in Cu3SnS4‐Cu3SbSe3 Chalcogenides

“…The widening of the bandgap can be ascribed to the reduction of p‐d hybridization caused by weakened CuS bond interaction . The calculated E g values are smaller than those experimentally determined (1.05–1.51 eV) as a result of GGA problem, while the latter ones are comparable to 1.21 eV from the synthesis in solvent . It should be noted here that at x ≥ 0.2 the bandgap increases slightly.…”

“…www.advelectronicmat.de those experimentally determined (1.05-1.51 eV) as a result of GGA problem, while the latter ones are comparable to 1.21 eV from the synthesis in solvent. [10] It should be noted here that at x ≥ 0.2 the bandgap increases slightly. The explanation to this phenomenon is that the more addition of Cu 3 SbSe 3 (x ≥ 0.3) causes the formation of Sb or Se containing impurities.…”

“…This compound is usually a degenerate p‐type semiconductor with a high carrier concentration ( n ) (≈6 × 10 21 cm −3 ) and a low Seebeck coefficient ( a ) (60–100 µVK −1 ) . Besides, there are two cation–anion bonds, CuS and SnS in this compound, with the former bond responsible for the contribution to the density of the state (DOS) in the valence band maximum (VBM) and the latter those in the conduction band minimum (CBM) . In order to improve its TE performance (ZT value), we have proposed a strategy in recent work: an addition of extra Sn to Cu 3 SnS 4 , that is, Cu 3 Sn 1+δ S 4 (the δ in this formula is the number of molars for the non‐stoichiometric addition of Sn), aiming at optimizing both the carrier concentration ( n ) and the Seebeck coefficient.…”

Remarkable Improvement of Thermoelectric Performance in Ga and Te Cointroduced Cu3SnS4

“…The valence band maximum (VBM) and the conduction band minimum (CBM) of CTS are composed of Cu 3d and S 3p states and Sn 5 and S 3p states, respectively, , it is therefore reasonable to engineer the band gap/structure by suitable doping at either Cu or S site or both. In this regard, we introduced Ga and Te in CTS systematically with the composition of (Cu 3 SnS 4 ) 1– x (Ga 2 Te 3 ) x , aiming to achieve a moderate carrier concentration.…”