Porous fluorescent SiC films were deposited by magnetron sputtering (MS)
using porous anodic aluminium oxide (AAO) template. In the first step AAO was
carefully placed on the Si substrate and then coated with SiC film using
magnetron sputtering at the deposition temperature of 873K for different
times. The pore diameter, pore spacing and thickness of the double pass
porous AAO template were 300, 450 and 500 nm, respectively. The SiC film
deposited for 60min showed macroporous structure with the pore size of 200 to
250 nm and pore spacing of 450 nm. The photoluminescence (PL) spectrum of the
porous SiC film ranged from 400 to 700 nm. The band gap of SiC is 2.305 eV,
and the phonon energy of phonon participating in PL of SiC is estimated at
0.075 eV. The source of phonon participating in PL of SiC may be from phonon
scattering of silica/SiC interface in porous SiC film. The porous AAO
template assisted magnetron sputtering is a promising technical processing
for the fabrication of macroporous fluorescent SiC film.