“…3,5,6,8,11 Isolated singlecrystalline ferroelectric nanostructures have shown improved memory characteristics such as high polarization retention compared to their thin film counterparts, due to the presence of single ferroelectric domains, 11 and increased electromechanical displacement due the reduction of clamping effects on 90 degree domain reorientation. 12 Techniques such as electron beam lithography, 5,6 focused ion beam milling, 12 nanoimprint lithography, 13,14 dip-pen lithography, 15 sol-gel selfassembly [16][17][18] and templating 7,11,[19][20][21] have been used successfully to fabricate arrays of discrete nanoislands or dots. Although 'top-down' lithography-based techniques have been successful in making precisely positioned ferroelectric nanodots, their inherent feature-size limitations, low throughput and high processing cost makes these techniques less prevalent.…”