2012
DOI: 10.1016/j.ijhydene.2012.05.094
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Facile fabrication of visible light driven tin oxide photoanode and its photoelectrochemical water splitting properties

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Cited by 4 publications
(2 citation statements)
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“…18) and Cu 2 O. 19 Semiconductors, such as TiO 2 , 1 WO 3 , 2 GaN, 20 SnO 2 , 21 Fe 2 O 3 , 3 SrTiO 3 , 5 BaTiO 3 , 5 ZnO 22 or ZnS 23 are promising photoanode candidates because they absorb high energy photons and are, therefore, capable of generating enough photovoltage (a minimum of 1.23 V) to drive unassisted water oxidation or both water oxidation and reduction (e.g., TiO 2 , TaON). 24 The disadvantage of wide-bandgap semiconductors is that their light absorption is mostly limited to the UV region of the solar spectrum.…”
Section: Introductionmentioning
confidence: 99%
“…18) and Cu 2 O. 19 Semiconductors, such as TiO 2 , 1 WO 3 , 2 GaN, 20 SnO 2 , 21 Fe 2 O 3 , 3 SrTiO 3 , 5 BaTiO 3 , 5 ZnO 22 or ZnS 23 are promising photoanode candidates because they absorb high energy photons and are, therefore, capable of generating enough photovoltage (a minimum of 1.23 V) to drive unassisted water oxidation or both water oxidation and reduction (e.g., TiO 2 , TaON). 24 The disadvantage of wide-bandgap semiconductors is that their light absorption is mostly limited to the UV region of the solar spectrum.…”
Section: Introductionmentioning
confidence: 99%
“…Finally, the PEC performance was obtained in this study compared with many previously studied SnO 2 - based PEC electrodes as revealed in Table 3 [ 47 , 48 , 49 , 50 , 51 , 52 , 53 , 54 , 55 , 56 , 57 , 58 ]. The values of J, IPCE, and ABPE confirm that the (2.5% Co, 673 K) SnO 2 is an efficient electrode for the PEC H 2 O splitting under visible light exposure.…”
Section: Resultsmentioning
confidence: 93%