Facile fabrication of p-type Cu x S transparent conducting thin films by metal sulfide precursor solution approach and their application in quantum dot thin films

Li, Shenjie; Zha, Tianyong; Wang, Qiang; Wang, Chengyu; Ren, Yujiao; Chen, Yanyan; Pan, Daocheng

doi:10.1016/j.jallcom.2017.05.069

Cited by 8 publications

(4 citation statements)

References 43 publications

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“…Based upon this optical property, CuS nanosheets are clearly an appealing candidate for optoelectronic devices in the visible to infrared region. Moreover, the transmittance of CuS in the visible region below 600 nm drops sharply. − …”

Section: Results and Discussionmentioning

confidence: 99%

Room Temperature Wafer-Scale Synthesis of Highly Transparent, Conductive CuS Nanosheet Films via a Simple Sulfur Adsorption-Corrosion Method

Hong

Kim

Hou

et al. 2021

ACS Appl. Mater. Interfaces

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The development of highly conductive electrodes with robust mechanical durability and clear transmittance in the visible to IR spectral range are of great importance for future wearable/flexible electronic applications. In particular, low resistivity, robust flexibility, and wide spectral transparency have a significant impact on optoelectronic performance. Herein, we introduce a new class of covellite copper monosulfide (CuS) nanosheet films as a promising candidate for soft transparent conductive electrodes (TCE). An atmospheric sulfur adsorptioncorrosion phenomenon represents a key approach in our work for the achievement of wafer-scale CuS nanosheet films through systematical control of the neat Cu layer thickness ranging from 2 nm to 10 nm multilayers at room temperature. These nanosheet films provide outstanding conductivity (~ 25 Ω sq -1 ) and high transparency (> 80 %) in the visible to infrared region as well as distinct flexibility and long stability under air exposure, yielding a high figure-of-merit (FoM) (~ 60) that is comparable to that of conventional rigid metal oxide material-based TCEs. Our unique room temperature synthesis process delivers high quality CuS nanosheets on any arbitrary substrates in a short time (< 1 min) scale, thus guaranteeing the widespread use of highly producible and scalable device fabrication.

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Section: Results and Discussionmentioning

confidence: 99%

Room Temperature Wafer-Scale Synthesis of Highly Transparent, Conductive CuS Nanosheet Films via a Simple Sulfur Adsorption-Corrosion Method

Hong

Kim

Hou

et al. 2021

ACS Appl. Mater. Interfaces

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“…The CuS nanosheet, which was prepared by a facile room temperature and ambient condition synthesis method, can guarantee a large-area production and enable the use of various substrates and form factors such as glass and flexible polymer substrates. Our ultrathin CuS film (20 nm) has high optical transmittance, as shown in the optical image in Figure c, and high electrical conductivity while maintaining the ultrathin thickness below 20 nm (the thickness was measured through AFM in Figure d), which is suitable as an EMI shield for transparent, flexible, and ultrathin applications …”

Section: Methodsmentioning

confidence: 98%

“…Our ultrathin CuS film (20 nm) has high optical transmittance, as shown in the optical image in Figure 1c, and high electrical conductivity while maintaining the ultrathin thickness below 20 nm (the thickness was measured through AFM in Figure 1d), which is suitable as an EMI shield for transparent, flexible, and ultrathin applications. 43 To evaluate the EMI performance of the ultrathin CuS nanosheet, we measured EMI transmittance and reflectance with a network vector analyzer (NVA, Keysight/Agilent E8364B) and compared it with other material's specific EMI shielding effectiveness (SSE, EMI SE/density (dB cm 3 g −1 )) versus thickness (SSE/t, Figure 1e) as this parameter allows fair comparison between different EMI shields that have different thicknesses. Surprisingly, the SSE/t values for the CuS nanosheet are much higher than those for other EMI shielding materials, including metals, 2D materials, and inorganic composites, and the SSE/t value of our CuS nanosheet reached up to 2.02 × 10 6 dB cm 2 g −1 .…”

Section: ■ Experimental Sectionmentioning

confidence: 99%

Electromagnetic Interference Shielding with 2D Copper Sulfide

Pak

Lim

Hwang

et al. 2022

ACS Appl. Mater. Interfaces

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Electronic devices in highly integrated and miniaturized systems demand electromagnetic interference shielding within nanoscale dimensions. Although several ultrathin materials have been proposed, satisfying various requirements such as ultrathin thickness, optical transparency, flexibility, and proper shielding efficiency remains a challenge. Herein, we report an ultrahigh electromagnetic interference (EMI) SSE/t value (>10 6 dB cm 2 /g) using a conductive CuS nanosheet with thickness less than 20 nm, which was synthesized at room temperature. We found that the EMI shielding efficiency (EMI SE) of the CuS nanosheet exceeds that of the traditional Cu film in the nanoscale thickness, which is due to high conductivity and the presence of internal dipole structures of the CuS nanosheet that contribute to absorption due to the damping of dipole oscillation. In addition, the CuS nanosheet exhibited high mechanical stability (10 4 cycles at 3 mm bending radius) and air stability (25 °C, 1 atm), which far exceeded the performance of the Cu nanosheet film. This remarkable performance of nanometer-thick CuS proposes an important pathway toward designing EMI shielding materials for wearable, flexible, and next-generation electronic applications.

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“…Additionally, QDTFs can be fabricated via a direct deposition method without the need of the complex quantum dot synthesis through molecular-based precursor solution. [11][12][13][14][15] Recently, we developed a molecular-based precursor solution approach to deposit Cu-doped Zn x Cd 1Àx S QD luminescent thin lms with a PL quantum yield of 25.5%. 11 Wang et al fabricated the Cu-In-Zn-S QDTFs though thermal decomposition of molecular-based precursors in the open air, and the PL quantum yields can reach as high as 22.1%.…”

Section: Introductionmentioning

confidence: 99%

Cu–Cd–Zn–S/ZnS core/shell quantum dot/polyvinyl alcohol flexible films for white light-emitting diodes

Zha

Gong

et al. 2020

RSC Adv.

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Facile fabrication of p-type Cu x S transparent conducting thin films by metal sulfide precursor solution approach and their application in quantum dot thin films

Cited by 8 publications

References 43 publications

Room Temperature Wafer-Scale Synthesis of Highly Transparent, Conductive CuS Nanosheet Films via a Simple Sulfur Adsorption-Corrosion Method

Room Temperature Wafer-Scale Synthesis of Highly Transparent, Conductive CuS Nanosheet Films via a Simple Sulfur Adsorption-Corrosion Method

Electromagnetic Interference Shielding with 2D Copper Sulfide

Cu–Cd–Zn–S/ZnS core/shell quantum dot/polyvinyl alcohol flexible films for white light-emitting diodes

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