2022
DOI: 10.1088/1361-6641/ac6ae1
|View full text |Cite
|
Sign up to set email alerts
|

Facile fabrication and enhanced photoresponse of CuO/β-Ga2O3 nanostructure photodetector

Abstract: CuO/β-Ga2O3 hybrid structures with β-Ga2O3 nanorods coated with CuO nanoparticle layers were successfully synthesized by a multi-cycle dipping and annealing process method. Compared with bare β-Ga2O3 nanorods, the CuO/β-Ga2O3 hybrid structures had greatly enhanced and dramatically broadened responses to light in the range from the near-ultraviolet to visible light. This novel synthetic pathway will provide new possibilities to prepare nanomaterials that integrate oxide heterojunctions for photodetection applic… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
1

Citation Types

0
1
0

Year Published

2023
2023
2024
2024

Publication Types

Select...
6

Relationship

0
6

Authors

Journals

citations
Cited by 6 publications
(1 citation statement)
references
References 31 publications
(31 reference statements)
0
1
0
Order By: Relevance
“…Owing to its excellent optical and electronic properties, β-Ga 2 O 3 is a great candidate to fabricate the core of a PD. Great efforts have been made to improve the performance of devices, for example, polymorphous or amorphous Ga 2 O 3 ; , exploiting new phase of Ga 2 O 3 ; ,, formation of heterojunctions to enable the effective separation of electron–hole pairs; , n-type doping to improve responsivity, increase the photo-to-dark current ratio and bandwidth, and reduce the resistance and capacitance of the metal electrode–semiconductor junction for a good electronic contact; and p-type doping to improve the low thermal conductivity of Ga 2 O 3 . However, these devices exhibit slow response speed as the oxygen vacancies defects are ubiquitous. , Herein, the crystal quality and size of Ga 2 O 3 are modified to improve the performance of devices.…”
Section: Introductionmentioning
confidence: 99%
“…Owing to its excellent optical and electronic properties, β-Ga 2 O 3 is a great candidate to fabricate the core of a PD. Great efforts have been made to improve the performance of devices, for example, polymorphous or amorphous Ga 2 O 3 ; , exploiting new phase of Ga 2 O 3 ; ,, formation of heterojunctions to enable the effective separation of electron–hole pairs; , n-type doping to improve responsivity, increase the photo-to-dark current ratio and bandwidth, and reduce the resistance and capacitance of the metal electrode–semiconductor junction for a good electronic contact; and p-type doping to improve the low thermal conductivity of Ga 2 O 3 . However, these devices exhibit slow response speed as the oxygen vacancies defects are ubiquitous. , Herein, the crystal quality and size of Ga 2 O 3 are modified to improve the performance of devices.…”
Section: Introductionmentioning
confidence: 99%