“…Owing to its excellent optical and electronic properties, β-Ga 2 O 3 is a great candidate to fabricate the core of a PD. Great efforts have been made to improve the performance of devices, for example, polymorphous or amorphous Ga 2 O 3 ; ,− exploiting new phase of Ga 2 O 3 ; ,,− formation of heterojunctions to enable the effective separation of electron–hole pairs; ,− n-type doping − to improve responsivity, increase the photo-to-dark current ratio and bandwidth, and reduce the resistance and capacitance of the metal electrode–semiconductor junction for a good electronic contact; and p-type doping to improve the low thermal conductivity of Ga 2 O 3 . However, these devices exhibit slow response speed as the oxygen vacancies defects are ubiquitous. , Herein, the crystal quality and size of Ga 2 O 3 are modified to improve the performance of devices.…”