Facile damage-free double exposure for high-performance 2D semiconductor based transistors

Wang, Dong; Wang, Zegao; Yang, Zhihao; Wang, Shaoyuan; Tan, Chao; Yang, Lei; Xin, Hao; Ke, Zungui; Dong, Mingdong

doi:10.1016/j.mtphys.2022.100678

Cited by 6 publications

(5 citation statements)

References 36 publications

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Section: Applications Of Mos 2 In Integration Circ...mentioning

confidence: 99%

“…Transition metal chalcogenides represented by molybdenum disulfide can be used to manufacture a wide range of emerging electronic devices. Among them, suspended 2D nanostructures can improve the performance of nanoelectronic devices through the electronic coupling of advanced substrate effects to be applied to practical applications such as sensing [151,152]. Wang et al constructed logic circuits such as logic inverters, NAND gates, and static randomaccess memory (SRAM) based on double-layer MoS 2 film and demonstrated the great potential of 2D materials in improving device performance and giving new functions to electronics and display technology [153].…”

Section: Transistors Inverter Electronicsmentioning

confidence: 99%

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Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

Tan

Huang

et al. 2023

Nano-Micro Lett.

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As an outstanding representative of layered materials, molybdenum disulfide (MoS2) has excellent physical properties, such as high carrier mobility, stability, and abundance on earth. Moreover, its reasonable band gap and microelectronic compatible fabrication characteristics makes it the most promising candidate in future advanced integrated circuits such as logical electronics, flexible electronics, and focal-plane photodetector. However, to realize the all-aspects application of MoS2, the research on obtaining high-quality and large-area films need to be continuously explored to promote its industrialization. Although the MoS2 grain size has already improved from several micrometers to sub-millimeters, the high-quality growth of wafer-scale MoS2 is still of great challenge. Herein, this review mainly focuses on the evolution of MoS2 by including chemical vapor deposition, metal–organic chemical vapor deposition, physical vapor deposition, and thermal conversion technology methods. The state-of-the-art research on the growth and optimization mechanism, including nucleation, orientation, grain, and defect engineering, is systematically summarized. Then, this review summarizes the wafer-scale application of MoS2 in a transistor, inverter, electronics, and photodetectors. Finally, the current challenges and future perspectives are outlined for the wafer-scale growth and application of MoS2.

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Section: Applications Of Mos 2 In Integration Circ...mentioning

confidence: 99%

Section: Transistors Inverter Electronicsmentioning

confidence: 99%

Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

Tan

Huang

et al. 2023

Nano-Micro Lett.

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“…Because the evaporated metal which has higher energy and are more active, could break the layered materials [31] and a van der walls interface would greatly promote the device's performance. [32,33] In this study, to exclude the influence of the metal deposition, the high conductive graphene layer is transferred on the mica and employed as the top-gated electrode. The high conductive Si is employed as the back-gated electrode.…”

Section: Resultsmentioning

confidence: 99%

Electrically Tuning Interfacial Ion Redistribution for mica/WSe₂ Memory Transistor

Yang

Wang

et al. 2022

Adv Elect Materials

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Memory device is an important part of electronic equipment. 2D transition metal dichalcogenides that exhibit novel electrical characteristics hold promise in developing new types of memory device. Here, the memory effect in 2D mica/WSe2 heterostructure is investigated. Under applying constant bias voltage and gate voltage, the K+ ions in mica will migrate in the direction of the electric field and be trapped to enable the memory function. The gradient K+ ions work as long‐range scatters to electrostatically dope the WSe2 channel. The shift of the threshold voltage indicates an electrostatic doping concentration up to 2.11 × 1012 cm−2. The operating voltage is as low as 10 V and the on/off ratio is estimated to be 104. To determine the mechanism, the dynamic behavior of the device is discussed and a model is proposed which reveals the correlation between the programming/erasing process and the device performance. Moreover, through defining and studying the effective charge trapping rate, θ, it is found that the trapped charge is proportional to the charge flowing through the channel which means that the device performance can be finely tuned by the programming process.

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“…Such a strong correlation also indicates that the oxygen vacancy at the interface of MoS 2 /BMN, as opposed to the intrinsic defects in the lattice of MoS 2 is of great significance. [42][43][44] When the scanning width is narrow, the current is not saturated and thus the electron concentration in MoS 2 will increase with the scanning width. With wider scanning width, the electron concentration is saturated, while the excess oxygen vacancy can still trap the electrons in MoS 2 , which manifests as the continuous increment of hysteresis width.…”

Section: Resultsmentioning

confidence: 99%

Modulate the Interfacial Oxygen Vacancy for High Performance MoS₂ Photosensing−Memory Device

Peng

Luo

Liang

et al. 2022

Advanced Optical Materials

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Developing memristor with photosensing behavior would facilitate the construction of an advanced neuromorphic computing framework for future sensing−memory−computing integrated system. Although the memristor has already got much attention, its optoelectronic sensing mechanism is still unclear, thus the enhancement is challenging. Herein, a MoS2 memristor is fabricated on the oxygen‐vacancy‐rich Bi1.5MgNb1.5O7 thin film. By combining the voltage stress and photoexcitation, the memristor, its photosensing property, and their correlation have been systematically studied. The results show that the interfacial oxygen vacancy can trap the photogenerated electron obeying the photogating effect which tunes the Fermi level of MoS2 and exhibits tunable hysteresis behavior. The photoexcitation mechanism has been studied showing wavelength and voltage‐dependent photosensing−memory performance. The responsivity can reach up to 2 × 1011 V W−1 at 550 nm illumination and the hysteresis ratio (ΔH/Vg), one of the factors determining the memory, can be modulated by 40 times, which is larger than for previous 2D materials‐based memristors. Contour maps of external quantum efficiency show illumination, voltage, and wavelength dependence where the value becomes larger at lower illumination power density and higher voltage. This study reveals the interfacial enhanced photosensing mechanism of MoS2 device and provides new way to enrich memristor performance.

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Facile damage-free double exposure for high-performance 2D semiconductor based transistors

Cited by 6 publications

References 36 publications

Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

Electrically Tuning Interfacial Ion Redistribution for mica/WSe₂ Memory Transistor

Modulate the Interfacial Oxygen Vacancy for High Performance MoS₂ Photosensing−Memory Device

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Facile damage-free double exposure for high-performance 2D semiconductor based transistors

Cited by 6 publications

References 36 publications

Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

Emerging MoS2 Wafer-Scale Technique for Integrated Circuits

Electrically Tuning Interfacial Ion Redistribution for mica/WSe2 Memory Transistor

Modulate the Interfacial Oxygen Vacancy for High Performance MoS2 Photosensing−Memory Device

Contact Info

Product

Resources

About

Electrically Tuning Interfacial Ion Redistribution for mica/WSe₂ Memory Transistor

Modulate the Interfacial Oxygen Vacancy for High Performance MoS₂ Photosensing−Memory Device