Facile colloidal synthesis of quinary CuIn1−xGax(SySe1−y)2 (CIGSSe) nanocrystal inks with tunable band gaps for use in low-cost photovoltaics

Chang, Sheng-Yuan; Chiang, Ming-Yi; Chiang, Cheng-Yen; Yuan, Fang-Wei; Chen, Chia-Yu; Chiu, Bo-Cheng; Kao, Tzu-Lun; Lai, Chi-Huang; Tuan, Hsing‐Yu

doi:10.1039/c1ee02341a

Cited by 63 publications

(50 citation statements)

References 35 publications

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“…All these peaks are shifted from Raman peaks for CFTSe (209, 270 cm À1 ) or CFTS (321, 284, 218 cm À1 ) phases as expected. 7,8,[26][27][28] Band gap measurements of CZFTS for Zn-rich composition showed 1.72 eV whereas those with Fe-rich composition gave a band gap of 1.67 eV, which are close to those reported previously. 2,7 Raman spectra obtained for the Fe-rich CZFTSe films showed a broad peak with low intensity at 230 cm À1 .…”

Section: Raman Spectra and Uv-visible Spectrasupporting

confidence: 82%

“…2 Nanocrystals of the related CuIn x Ga 1Àx (S y Se 1Ày ) 2 (CIGSSe) synthesized by colloidal methods, have band gaps tunable from 0.98-2.40 with changes in x and y from 0 to 1. 8 AACVD is a simple technique which can operate at an ambient-pressure using the nebulization of the precursor molecules, followed by transport of the aerosol by an inert carrier gas such as argon or nitrogen to a substrate surface heated in a furnace where thermal decomposition of the precursor occurs.…”

Section: Introductionmentioning

confidence: 99%

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The controlled deposition of Cu₂(Zn_yFe_1−y)SnS₄, Cu₂(Zn_yFe_1−y)SnSe₄and Cu₂(Zn_yFe_1−y)Sn(S_xSe_1−x)₄thin films by AACVD: potential solar cell materials based on earth abundant elements

2015

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Section: Raman Spectra and Uv-visible Spectrasupporting

confidence: 82%

Section: Introductionmentioning

confidence: 99%

The controlled deposition of Cu₂(Zn_yFe_1−y)SnS₄, Cu₂(Zn_yFe_1−y)SnSe₄and Cu₂(Zn_yFe_1−y)Sn(S_xSe_1−x)₄thin films by AACVD: potential solar cell materials based on earth abundant elements

2015

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“…This motivates the calculation of the local bandgap E g ( x , y ) from the x and y profiles via Eq. which results in the double bandgap grading displayed in Fig. :

E_{normalg} (x, y) = (0.98 + 0.167 x^{2} + 0.17 y^{2} + 0.0023 x^{2} y - 0.17 x y^{2} + 0.397 x y + 0.31 y + 0.523 x) eV .

…”

Section: Methodsmentioning

confidence: 99%

Impact of varied sulfur incorporation on the device performance of sequentially processed Cu(In,Ga)(Se,S)₂ thin film solar cells

Knecht

Hammer

Parisi

et al. 2013

Phys. Status Solidi A

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In order to improve the performance of chalcopyrite Cu(In 1 À x ,Ga x )(Se 1 À y S y ) 2 solar cells, the implementation of a bandgap widening at the absorber/buffer interface via an increase of the [S]/[S þ Se] ratio is investigated. In this work we examine industrially processed samples, which were fabricated via the deposition-reaction process with varied H 2 S pressure during rapid thermal processing (RTP). Precursors which were exposed to a crucial amount of sulfur during the RTP step resulted in samples with significantly improved device performance. The increase of the open circuit voltage by about 150 mV cannot sufficiently be explained by bandgap widening.Observation of a strongly reduced saturation current density and ideality factor in intensively sulfurized samples suggest subdued recombination via mid-gap defect states located in the space charge region. This hypothesis is supported by results of deep-level transient spectroscopy measurements, which show that in both samples a mid-gap minority defect is present albeit its concentration is about one magnitude larger in sulfur-poor samples. These results confirm that sulfur passivates recombination centers in the depletion layer and hence significantly increases the open circuit voltage and the overall device performance of the photovoltaic devices.

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“…Nonvacuum process is one of the promising methods to bring down the fabrication cost of solar cells, which may have several inherent advantages, such as no requirement of expensive vacuum equipments, less energy‐intensive deposition, and much better material utilization . Alternative nonvacuum strategies with reasonable success have included a nanocrystal “inks” printing method , an electrochemical deposition method , and a hydrazine‐assisted deposition method . Among these nonvacuum approaches, the highest efficiency achieved to date is 15.2% by the hydrazine assisted deposition method, in which hydrazine was used as the solvent for dissolving metal chalcogenides to fabricate the CIGS absorber layer .…”

Section: Introductionmentioning

confidence: 99%

Deposition of CIGS films by hydrazine-free solution method

Zhou

Jiao

et al. 2013

Phys. Status Solidi A

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In this paper, copper indium gallium diselenide (CIGS) thin films were deposited by a hydrazine-free solutions method. In the proposed method, acetylacetonate salts and Se powder were simply dissolved in triethylenetetramine under ambient conditions, respectively. These two solutions were mixed in a certain percentage to form the final CIGS precursor solution. CIGS films were obtained by a drop-coating method and subsequently annealed in nitrogen atmosphere. The facile formation of the precursor solution without the need to prefabricate nanoparticles enables a rapid and easy processing. The high stability of the solution in air further ensures the precursor preparation and the film deposition in ambient conditions without a glove box. The crystal structure, morphology, composition, electronic state, optical, and electrical qualities of CIGS films were characterized by XRD, SEM, EDS, XPS, UV-vis, and I-V. The easy preparation and low-cost nature of the proposed strategy make it quite attractive. The proposed synthesis strategy developed in this work may be used as a general process for low-cost deposition of CIGS film and may have bright application prospects in highefficiency, yet low-cost, photovoltaic areas in the future.

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Facile colloidal synthesis of quinary CuIn1−xGax(SySe1−y)2 (CIGSSe) nanocrystal inks with tunable band gaps for use in low-cost photovoltaics

Cited by 63 publications

References 35 publications

The controlled deposition of Cu₂(Zn_yFe_1−y)SnS₄, Cu₂(Zn_yFe_1−y)SnSe₄and Cu₂(Zn_yFe_1−y)Sn(S_xSe_1−x)₄thin films by AACVD: potential solar cell materials based on earth abundant elements

The controlled deposition of Cu₂(Zn_yFe_1−y)SnS₄, Cu₂(Zn_yFe_1−y)SnSe₄and Cu₂(Zn_yFe_1−y)Sn(S_xSe_1−x)₄thin films by AACVD: potential solar cell materials based on earth abundant elements

Impact of varied sulfur incorporation on the device performance of sequentially processed Cu(In,Ga)(Se,S)₂ thin film solar cells

Deposition of CIGS films by hydrazine-free solution method

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Facile colloidal synthesis of quinary CuIn1−xGax(SySe1−y)2 (CIGSSe) nanocrystal inks with tunable band gaps for use in low-cost photovoltaics

Cited by 63 publications

References 35 publications

The controlled deposition of Cu2(ZnyFe1−y)SnS4, Cu2(ZnyFe1−y)SnSe4and Cu2(ZnyFe1−y)Sn(SxSe1−x)4thin films by AACVD: potential solar cell materials based on earth abundant elements

The controlled deposition of Cu2(ZnyFe1−y)SnS4, Cu2(ZnyFe1−y)SnSe4and Cu2(ZnyFe1−y)Sn(SxSe1−x)4thin films by AACVD: potential solar cell materials based on earth abundant elements

Impact of varied sulfur incorporation on the device performance of sequentially processed Cu(In,Ga)(Se,S)2 thin film solar cells

Deposition of CIGS films by hydrazine-free solution method

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The controlled deposition of Cu₂(Zn_yFe_1−y)SnS₄, Cu₂(Zn_yFe_1−y)SnSe₄and Cu₂(Zn_yFe_1−y)Sn(S_xSe_1−x)₄thin films by AACVD: potential solar cell materials based on earth abundant elements

The controlled deposition of Cu₂(Zn_yFe_1−y)SnS₄, Cu₂(Zn_yFe_1−y)SnSe₄and Cu₂(Zn_yFe_1−y)Sn(S_xSe_1−x)₄thin films by AACVD: potential solar cell materials based on earth abundant elements

Impact of varied sulfur incorporation on the device performance of sequentially processed Cu(In,Ga)(Se,S)₂ thin film solar cells