Facile carbon monoxide dissociation on copper: promotion by aluminum

Colaianni, M. L.; Chen, J. G.; Yates, John T.

doi:10.1021/j100113a036

Cited by 9 publications

(10 citation statements)

References 4 publications

(5 reference statements)

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“…The -NH 2 deformation mode at 1550 cm -1 is strongly attenuated, while a new mode becomes fully developed at 1100 cm -1 . we have identified this 1100 cm -1 mode as the deformation mode, b(NH), of a surface >NH species in a detailed vibrational study published elsewhere [10]. This >NH species is directly derived from further dissociation of -NH 2 on the surface.…”

Section: Resultsmentioning

confidence: 86%

“…Both the Si(111) and Si(100) crystals were p-type boron-doped (10 Ucm resistivity) wafers oriented within 0.50 to their respective crystallographic directions and prepared following standard procedures described in detail elsewhere [10]. Exposure to NH 3 gas was conducted through a calibrated effusive gas doser which contains an internal micron-sized pinhole and a front-mounted microcapillary-array for collimation purpose.…”

Section: Methodsmentioning

confidence: 99%

“…Both ultra-violet photoelectron spectroscopy (UPS) and atom-resolved scanning tunneling microscopy (STM) studies have shown the suppression of the dangling b,._d electronic states upon NH 3 adsorption. Surface vibrational spectroscopic measurements [6][7][8][9][10] performed on Si(100)-(2xl), Si(111)-(7x7) and amorphous Si surfaces indicate that mainly Si-H and Si-NH 2 species are initially produced through the dissociative adsorption of NH 3 . Thus the low temperature surface chemistry primarily involves the formation of Si-N< and Si-H chemical bonds localized on the dangling bond sites.…”

Section: Introductionmentioning

confidence: 99%

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Silicon backbond strain effects on NH3 surface chemistry: Si(111)-(7 × 7) compared to Si(100)-(2 × 1)

1992

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Section: Resultsmentioning

confidence: 86%

Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Silicon backbond strain effects on NH3 surface chemistry: Si(111)-(7 × 7) compared to Si(100)-(2 × 1)

1992

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“…Prior to introduction into the UHV system, the crystal was cleaned by the extended RCA wet chemical process to remove possible imbedded metal impurities from the crystal edges due to cutting. The crystal was then mounted onto a liquid N 2 -cooled sample manipulator in the UHV system [16). Direct resistive heating was employed to give control of the crystal temperature in the range 100 to 1200 K, as measured with an imbedded type-E (chromel-constantan) thermocouple which is shielded from the silicon by a tantalum foil envelope.…”

Section: Methodsmentioning

confidence: 99%

The thermal dissociation of decaborane on Si(111)-(7×7) and doping effects in the near surface region

Chen

Colaianni

Yates

1992

Journal of Applied Physics

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The thermal decomposition of decaborane (B10H14) and its doping effects on Si(111)-(7×7) has been investigated by surface spectroscopies. Upon adsorption between 100 and 300 K, molecular decaborane was identified on the surface by high-resolution electron-energy-loss spectroscopy (HREELS) by the absence of Si-H surface species production. The thermal decomposition of adsorbed decaborane molecules at higher temperatures involves a preferential removal of hydrogen from the weaker B—H—B linkage. H2 thermal desorption was observed to cover a wide temperature range between 300 and 900 K. Clean boron deposition on the surface was achieved at ∼900 K. Upon heating to ∼1275 K, extensive boron diffusion into bulk silicon produced a highly B-doped region below the surface (∼103 Å) with a carrier hole concentration on the order of ∼1019 cm−3 depending upon the initial surface boron coverage and annealing conditions. The surface adopted a (√3×√3)R30° reconstruction with a nominal 1/3 ML boron occupying subsurface substitutional sites. Both the localized B-Si vibration and carrier surface plasmon excitation were observed by HREELS at 100 K.

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“…[3][4][5][6][7][8][9] Although previous scanning tunneling microscopy ͑STM͒ studies have found that the center adatom ͑Ae͒ is the preferred NH 3 reaction site, no comments are made on the adsorption of NH 2 . 10 The results of high resolution electron energy loss 4,11,12 and photoemission-based techniques 3,5,6,13 have revealed the coexistence of NH 2 and NH, but no consensus is accomplished on which site NH 2 is adsorbed. Moreover, the production channel of NH species observed in the experiments is not clear.…”

mentioning

confidence: 99%

NH2and NH bonding sites determined by STM-induced activation on theNH3-

Chang

2007

Phys. Rev. B

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In situ scanning tunneling microscopy and density functional theory ͑DFT͒ calculations are employed to investigate single NH 3 -molecule-reacted Si͑111͒-7 ϫ 7 half cells at room temperature. An NH 3 molecule is dissociatively adsorbed on the surface, and each of its fragments, H or NH 2 , may be adsorbed at an adatom or at a rest atom site. Intermediated by a metastable species, the NH 2 adsorbed atop the adatom is transformed into a stable species when negative sample bias voltages are applied for scanning. By using this property, we determine that 12.1% of the reacted adatom sites are capped by NH 2 and, in turn, 87.9% of NH 2 are bonded with the rest atoms. According to the DFT calculation results, the metastable species and stable species are considered to be the NH 2 -and NH-inserted adatom backbond structures, respectively.

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Facile carbon monoxide dissociation on copper: promotion by aluminum

Cited by 9 publications

References 4 publications

Silicon backbond strain effects on NH3 surface chemistry: Si(111)-(7 × 7) compared to Si(100)-(2 × 1)

Silicon backbond strain effects on NH3 surface chemistry: Si(111)-(7 × 7) compared to Si(100)-(2 × 1)

The thermal dissociation of decaborane on Si(111)-(7×7) and doping effects in the near surface region

NH2and NH bonding sites determined by STM-induced activation on theNH3-

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