Faceting in stockbarger grown garnets

Dynamics of partially faceted melt/crystal interfaces I: computational approach and single step–source calculations

“…[20]) and (b) in a number of experimental analyses there are indications of facets intersecting ampoule walls even when an encapsulant is not used (see e.g. [2]). …”

“…(30) boundary conditions involving heat fluxes (Eqs. (2), and (4) are implemented in the usual fashion as natural boundary conditions.…”

“…about 1 ). Thus, for sufficiently large mis-orientation angles (y > y 0 ), the normal growth velocity can be assumed not to depend on the crystallographic orientation and growth [2] and silicon [17] proceeds in a manner characteristic of a rough growth mechanism. The transition from SM to rough growth, caused by an increase in the misorientation angle, as well as the general kinetic roughening transition (caused by increased levels of undercooling), occur under conditions where the kinetic coefficient is relatively large.…”

“…As discussed in detail in Ref. [1], based on previous experimental works [2][3][4], as well as on simple theoretical estimates [5], undercooling along facets appearing on the melt/crystal interface of largemelt growth systems can in many cases be attributed to interfacial attachment kinetics.…”

Dynamic three-dimensional simulation of facet formation and segregation in Bridgman crystal growth

“…Facets often appear at low-index crystallographic planes having a lower surface energy. For oxides, such as yttrium aluminum garnet (YAG) and gadolinium gallium garnet (GGG), having the growth in the /1 1 1S direction, faceting at {2 1 1} crystallographic planes is typical [4,5]. Other facets in {1 1 1} and {1 1 0} were also observed.…”