“…where C is the space-charge capacitance of the semiconductor, e is the electron charge (1.62 Â 10 À19 C), ε is the permittivity of the dielectric constant (7.6 for Cu 2 O), ε 0 is the permittivity of the vacuum (8.85 Â 10 À14 F cm À1 ), N A is the carrier density, E is the applied potential, V fb is the flat band potential, k is Boltzmann's constant, and T is the absolute temperature. [25] Interestingly, a negative slope can be observed in Figure 2b, suggestive of an ntype nature of the obtained Cu 2 O nanocubes. Although still a matter of debate, the n-type conductivity displayed by Cu 2 O thin films has long been observed, [26][27][28][29][30] especially for substoichiometric Cu 2 O samples with oxygen vacancies.…”