Fabry–Perot reflectance modulator for 1.3 μm from (InAlGa)As materials grown at low temperature

Fritz, I. J.; Hammons, B. E.; Howard, A. J.; Brennan, Thomas M.; Olsen, J. A.

doi:10.1063/1.108519

Cited by 27 publications

(8 citation statements)

References 10 publications

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“…In both approaches, the layers usually present rough morphologies, which limit the subsequent device fabrication and degrade their specifications. 1,2 It is well known that the surface of low-strained layers ͑Ͻ2%͒ develops a crosshatched morphology once they exceed the thickness at which mechanisms of dislocation nucleation and multiplication start to work (h p ). 3,4 The crosshatched morphology consists of ridges and grooves running parallel to ͗110͘ directions with a well-defined average distance between consecutive ridges.…”

Section: Introductionmentioning

confidence: 99%

In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs

González¹,

González²,

González³

et al. 2001

Journal of Applied Physics

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Using real-time in situ laser light scattering we study, in this work, the influence of growth kinetics on the initial development of the crosshatched morphology and its subsequent evolution. The crosshatched morphology is characteristic of relaxed low strained layers ͑Ͻ 2%͒ and has been traditionally related to the plastic relaxation process driven by generation and multiplication of dislocations. However we have observed that, if the growth rate is slow enough, the onset of crosshatch formation takes place at a layer thickness in which the dislocation formation and multiplication processes have not appeared yet. This reveals that the stress field generated by the small density of misfit dislocations formed by bending of the dislocations preexisting in the substrate is strong enough to affect the evolution of the growth front morphology. Our results also show that the starting point and evolution of this characteristic morphology depend on the growth rate in such a way that when the growth rate is lower the crosshatched morphology starts to develop at a smaller thickness and shows a faster evolution rate.

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Section: Introductionmentioning

confidence: 99%

In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs

González¹,

González²,

González³

et al. 2001

Journal of Applied Physics

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“…The degradation of contact performance at higher anneal t e m p h e s is consistant with previous reports on similiar materials and has commonly been attributed to spikesadspatial composition problems with the Au-based alloys[ 10,111. In contrast, on the InGaAs layers continued to decrease with increasing anneal temperature and reached a minimum of p, = 5.81 x lo=] Qcm2 at 420" C. However, an examination of the surface morphology of the BeAu contacts suggested that the metal/semiconductor interface was severely damaged which could have been a result of undesirable In segregation or layer intermixing reported previously [4,12] .…”

Section: Resultsmentioning

confidence: 83%

“…The highest quality material with minimization of dislocations and cross-hatching is achieved by using molecular beam epitaxy (MBE) at low temperatures (-400' C) [4]. For optimal device performance, it is necessary to make metal contact directly to the quarter-wave mirror stacks.…”

Section: Disclaimermentioning

confidence: 99%

A study of p-type ohmic contacts to InAlAs/InGaAs heterostructures

Briggs¹,

Howard²,

Baca³

et al. 1995

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Optical modulators operating at near-infrared wavelengths are of interest for a variety of applications including bi-directional communications and optical interconnects. The fabrication of 1.06 pm and 1.32 pm operating wavelength strained-layer-superlattice vertical-cavity optoelectronic modulators requires the formation of a p-type ohmic contact to the InA1AslInGaAs quarter-wave bottom mirror stack. In this study, BeAu and TiPtAu p-type ohmic contact metallization schemes were evaluated for use on molecular beam epitaxy (MBE) grown In,,,Al,,~/In,,,Ga~,,As and 1n.,,Al,~,A~/In.~,Ga.~~As device heterostructures. Recessed and nonrecessed transmission line measurement (TLM) structures were fabricated and evaluated as a . function of rapid thermal anneal (RTA) temperatures over the range of 360" C -420" C . Atomic force microscopy (AFM) was used to determine the surface morphology of each sample for evidence of metal or material degradation. For contacts directly on InGaAs layers, TiPtAu contacts had relatively high specific contact resistance values of p, -3 x Qcm2 and displayed no dependance on the anneal. The BeAu contacts had minimum specific contact resistance values of p, -5 x lo-' Qcm' but showed evidence of degradation at higher temperatures. Contacts directly made to InAlAs layers had minimum specific contact resistances of p, -4 x lo-' Qcm2 and were improved slightly with the addition of a thin GaAs layer. DISCLAIMERThis report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights. Reference herein to any specific commercial product, process, or service by trade name, trademark, manufacturer, or otherwise does not necessarily constitute or imply its endorsement, recornmendation, or favoring by the United States Government or any agency thereof. The views and opinions of authors expressed herein do not necessarily state or reflect those of the United States Government or any agency thereof.Portions of this document may be illegible in electronic image products. Images are produced from the best available 0 - These devices require the growth of relatively thick (In,M,Ga)As buffer layers on GaAs substrates to provide an appropriate lattice constant for subsequent growth of the active device structure.Low-doped ternary InAlAsLInGaAs multilayers with precisely controlled compositional values and thicknesses are then grown to create the quarter-wave mirror stacks and cavity region which provide reflectance or transmission mode operation at the desired wavelength. The highest quality material with minimization of dislocations and cross-hatching is achieved by using molecular beam epitaxy (MBE) at low temperatures (-400' C) [4]....

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“…15,16 In order to control the layer thickness of Bragg reflector and other multilayer structures using in situ laser reflectometry, it is important to know the index of refraction of the materials at the given laser beam wavelength. Recently, InAlAs/InGaAs quarterwavelength Bragg reflector has been grown on a GaAs substrate as a high reflectance modulator for the long wavelength optical communications.…”

Section: Measurement Of Index Of Refraction Of In X Al 1؊x As Epitaximentioning

confidence: 99%

Measurement of index of refraction of InxAl1−xAs epitaxial layer using in situ laser reflectometry

Baek

Lee

Choi

et al. 1996

Applied Physics Letters

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Fabry–Perot reflectance modulator for 1.3 μm from (InAlGa)As materials grown at low temperature

Abstract: Normal incidence infrared modulators using intersubband transitions in InAs/GaSb/AlSb stepped quantum wells grown by molecular beam epitaxy

Cited by 27 publications

References 10 publications

In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs

In situ laser light scattering studies on the influence of kinetics on surface morphology during growth of In0.2Ga0.8As/GaAs

A study of p-type ohmic contacts to InAlAs/InGaAs heterostructures

Measurement of index of refraction of InxAl1−xAs epitaxial layer using in situ laser reflectometry

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