Fabrications of Hetero-Junction Schottky Diodes by Electrodeposition of Nano-Structured CuInSe2 Materials Using Different Upper Electrodes

Abstract

In this study, CuInSe2 (CIS) films (CIS-TFs) and nanorods (CIS-NRs) were successfully deposited on Mo/glass and p+-silicon (p+-Si) using an electrodeposition method. Anodic aluminum oxide (AAO) was used as the template when the CIS-NRs were deposited. Pt, indium tin oxide (ITO), and Ag were deposited as the upper electrodes using a sputtering method to form the hetero-junction devices of Pt/CIS-NRs/p+-Si, ITO/CIS-NRs/p+-Si, ITO/CIS-TF/Mo/glass, and Ag/CIS-NRs/p+-Si, respectively. When p+-Si was used as the substrate, Al was deposited on p+-Si to form negative electrodes for the devices of Pt/CIS-NRs/p+-Si, ITO/CIS-NRs/p+-Si, and Ag/CIS-NRs/p+-Si. The current–voltage properties of all the hetero-junction devices were measured and we found that the hetero-junction of ITO/CIS-NRs/p+-Si, ITO/CIS-TF/Mo/glass, and Ag/CIS-NRs/p+-Si devices revealed the properties of Schottky diodes but the hetero-junction device of Pt/CIS-NRs/p+-Si device did not. The reason for the cause of the differences between these hetero-junction devices was investigated for this study.