Fabrication technique for Si single-electron transistor operating at room temperature

Spring constant and damping constant tuning of nanomechanical resonators using a single-electron transistor

“…have been able to fabricate doped silicon bridges that show room temperature Coulomb blockade. 21 Together with a rareearth magnet with surface fields ϳ1 T, one may be able to implement this technique at room temperature. A limitation of these effects is the fact that the spring constant and damping constant modifications are not independent; they are both functions of V DS and V G .…”

Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature

“…1 However, the reliability of room-temperature ͑RT͒ operation and requirement of complementary metal-oxide-semiconductor-compatible processes have been the main bottlenecks for implementing further practical device applications. Significant earlier work has been aimed at implementing a RT-operating SET, using various schemes, device structures, and fabrication processes, [2][3][4][5][6][7] but reliable processes for the controlled fabrication of ultrasmall size Coulomb islands of less than 5 nm have not been firmly established yet, limiting practical device applications at RT.…”

Room temperature molecular single-electron transistor

“…[2]). Let us mention, for example, room temperature memory effects [3], a single-electron transistor with visible charging effects up to 300 K [4] using silicon-based structures, a gated system of metal grains [5] operating at 77 K, and room-temperature single-electron transistor fabricated by nanooxidation process [6].…”