2000
DOI: 10.1116/1.1321285
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Fabrication technique for nanometer-scale InAs quantum devices: Observation of quantum interference in Aharonov–Bohm rings and Coulomb blockade in quantum dots

Abstract: Articles you may be interested inCoulomb-modified equilibrium and nonequilibrium properties in a double quantum dot Aharonov-Bohm-Fano interference device

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Cited by 2 publications
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“…In the past two decades, in connection with the dis covery of the "Coulomb blockage" phenomenon for semiconductor quantum dots and fabrication of experimental samples of cryogenic single electron transistors based on this phenomenon [1][2][3][4][5], design ers started attempts to use metal nanoparticles, mainly of noble metals Ag, Pd, Ir, Pt, and Au [6,7], in order to fabricate a single electron transistor operating at room temperature. Their sizes can be brought to 1 or even to 0.5 nm.…”
Section: Introductionmentioning
confidence: 99%
“…In the past two decades, in connection with the dis covery of the "Coulomb blockage" phenomenon for semiconductor quantum dots and fabrication of experimental samples of cryogenic single electron transistors based on this phenomenon [1][2][3][4][5], design ers started attempts to use metal nanoparticles, mainly of noble metals Ag, Pd, Ir, Pt, and Au [6,7], in order to fabricate a single electron transistor operating at room temperature. Their sizes can be brought to 1 or even to 0.5 nm.…”
Section: Introductionmentioning
confidence: 99%