Fabrication, superconducting Tc and charge transfer of VNx NbNx and TaNx foils

Chen, Tar Pin; Yang, Xinyu; Sourivong, P.; Kamimura, Kazuaki; Viescas, A. J.; Chen, C. J. Yen; Curley, Jonathan D.; Phares, Denis J.; Hall, Harvey; Dayton, P. A.; Hart, Chris; Wang, J. T.

doi:10.1016/0375-9601(96)00340-4

Cited by 5 publications

(3 citation statements)

References 34 publications

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“…The T c of the films was sensitive to the N 2 pressure as shown in figure 3 for films deposited at 600 • C. In this case, the N 2 pressure ranged from 50 mT to 80 mT; there was a gradual increase in T c with N 2 pressure, then a decrease after 60 mT for NbN on MgO, while the peak occurred at 70 mT for NbN on SiN x /Si. This type of T c dependence on N 2 pressure has been commonly observed in other superconducting transition metal nitrides using other deposition techniques [11].…”

Section: Film Growth and Characterizationsupporting

confidence: 72%

Superconducting NbN films grown using pulsed laser deposition for potential application in internally shunted Josephson junctions

Bhat

Meng

Wong

et al. 1999

Supercond. Sci. Technol.

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We have grown superconducting NbN films using a pulsed KrF laser for potential use as superconducting electrodes in SNS Josephson junctions being developed for nonlatching logic applications. The NbN films show a superconducting transition of 16 K using an Nb target in background N2 gas. The Tc dependence on N2 pressure in the range of 50-80 mTorr was investigated at a growth temperature of 600 °C. The NbN films were grown on MgO(100) and amorphous SiNx/Si substrates. In the latter case, the films had a lower Tc, and appeared amorphous from xray diffraction measurements, while those on the MgO(100) substrates were strongly textured. AFM measurements reveal RMS surface roughness as low as 1 nm, over a 5 µm × 5 µm area, indicating that these films appear suitable for SNS junctions.

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Section: Film Growth and Characterizationsupporting

confidence: 72%

Superconducting NbN films grown using pulsed laser deposition for potential application in internally shunted Josephson junctions

Bhat

Meng

Wong

et al. 1999

Supercond. Sci. Technol.

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“…The metallic nitrides are often superconductors, and can achieve high values of T c (e.g., up to 13-17 K for cubic NbN and ordered hexagonal MoN). [203][204][205][206][207][208][209][210] The metal nitrides and carbides possess a high cohesive energy, which makes them highly refractory. They are very high hardness materials, developed for cutting and grinding applications, and as scratch-resistant coatings (TiN, WC, etc.).…”

Section: Oxonitridesmentioning

confidence: 99%

High-pressure chemistry of nitride-based materials

et al. 2006

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Besides temperature at one atmosphere, the applied pressure is another important parameter for influencing and controlling reaction pathways and final reaction products. This is relevant not only for the genesis of natural minerals, but also for synthetic chemical products and technological materials. The present critical review (316 references) highlights recent developments that utilise high pressures and high-temperatures for the synthesis of new materials with unique properties, such as high hardness, or interesting magnetic or optoelectronic features. Novel metal nitrides, oxonitrides as well as the new class of nitride-diazenide compounds, all formed under high-pressure conditions, are highlighted. Pure oxides and carbides are not considered here. Moreover, syntheses under high-pressure conditions require special equipment and preparation techniques, completely different from those used for conventional synthetic approaches at ambient pressure. Therefore, we also summarize the high-pressure techniques used for the synthesis of new materials on a laboratory scale. In particular, our attention is focused on reactive gas pressure devices with pressures between 1.2 and 600 MPa, multi-anvil apparatus at P < 25 GPa and the diamond anvil cell, which allows work at pressures of 100 GPa and higher. For example, some of these techniques have been successfully upgraded to an industrial scale for the synthesis of diamond and cubic boron nitride.

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“…Owing to its high melting point, high hardness, good toughness and stable chemical properties, the VN coating has a very wide range of applications and long-term prospects [1] . To further improve the high temperature stability of nitride coatings, Koehler proposes the concept of heteroepitaxial superlattice structure [2] , which makes the new hard nano-multilayer film develops rapidly.…”

Section: Introductionmentioning

confidence: 99%

First-Principles Study of Electronic Structure of V-Si-N Nanocomposite Thin Film

Jia

Liu

2012

AMR

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In this paper, the method for plane wave ultrasoft pseudopotentials of first-principles is adopted to calculate electronic structures of three models including VN crystal, the absence of V atoms and the replacement of V atoms by Si atoms by the VASP software package. On the basis of the optimized VN’s lattice constant, the energy band structures and density of states(DOS) curves of those three models are analyzed. The results show that the 3d electrons of V atoms determine that VN crystal is a conductor. The crystal lack of V atoms forms a peak caused by the empty position near the Fermi level. Its valence band energy level splits and the ability to form bonds reduces to be a metastable phase structure. The formation of solid solution interface due to Si atoms replacing V atoms leads to the peak value of total DOS to decrease, the distribution of electrons to be more diffuse and the ability to form bonds to strengthen.

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Fabrication, superconducting Tc and charge transfer of VNx NbNx and TaNx foils

Cited by 5 publications

References 34 publications

Superconducting NbN films grown using pulsed laser deposition for potential application in internally shunted Josephson junctions

Superconducting NbN films grown using pulsed laser deposition for potential application in internally shunted Josephson junctions

High-pressure chemistry of nitride-based materials

First-Principles Study of Electronic Structure of V-Si-N Nanocomposite Thin Film

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