Fabrication Strategies and Measurement Techniques for Performance Improvement of Graphene/Graphene Derivative Based FET Gas Sensor Devices: A Review

Bhattacharyya, P.

doi:10.1109/jsen.2021.3060463

Cited by 13 publications

(6 citation statements)

References 62 publications

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“…The working principle of the proposed sensor is based on the gas-induced modulation in metal gate work function [ 11 , 12 , 13 , 14 , 15 , 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 , 24 , 25 , 26 ]. Our proposed design can detect two different types of gases by recording a change in p-type (in the case of the first gas type) and n-type (in the case of the second gas type) conduction branches.…”

Section: Nanosensor Structure and Multi-gas Sensing Principlementioning

confidence: 99%

“…This coupled matrix calculation stops by a self-consistency in terms of the current and previous potential profile [42]. Then the nanodevice characteris- The working principle of the proposed sensor is based on the gas-induced modulation in metal gate work function [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25][26]. Our proposed design can detect two different types of gases by recording a change in p-type (in the case of the first gas type) and n-type (in the case of the second gas type) conduction branches.…”

Section: Quantum Simulation Approachmentioning

confidence: 99%

“…In fact, enhancing the performance of FET-based gas sensors with sensitive gates can be achieved through two primary approaches. The first approach involves developing new sensing gate based on high-selective and ultra-sensitive materials to gas measurands [ 11 , 12 , 13 , 14 , 23 , 24 , 25 ]. In literature, many sensing materials have been proposed and investigated in the framework of the gas-induced gate work function modulation, among other we cite the metals such as palladium (Pd) and platinum (Pt), and the organic conducting polymers, which can be employed to sense specific target gas molecules selectively, such as polyaniline (PANI) and poly-pyrrole-tetrafluoroborate (PPTFB) for ammonia (NH 3 ) and CH 3 OH (MeOH) detection, respectively [ 26 ].…”

Section: Introductionmentioning

confidence: 99%

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Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection

Tamersit,

Kouzou,

Rodriguez

et al. 2024

Nanomaterials

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In this paper, a new junctionless graphene nanoribbon tunnel field-effect transistor (JLGNR TFET) is proposed as a multi-gas nanosensor. The nanosensor has been computationally assessed using a quantum simulation based on the self-consistent solutions of the mode space non-equilibrium Green’s function (NEGF) formalism coupled with the Poisson’s equation considering ballistic transport conditions. The proposed multi-gas nanosensor is endowed with two top gates ensuring both reservoirs’ doping and multi-gas sensing. The investigations have included the IDS-VGS transfer characteristics, the gas-induced electrostatic modulations, subthreshold swing, and sensitivity. The order of change in drain current has been considered as a sensitivity metric. The underlying physics of the proposed JLGNR TFET-based multi-gas nanosensor has also been studied through the analysis of the band diagrams behavior and the energy-position-resolved current spectrum. It has been found that the gas-induced work function modulation of the source (drain) gate affects the n-type (p-type) conduction branch by modulating the band-to-band tunneling (BTBT) while the p-type (n-type) conduction branch still unaffected forming a kind of high selectivity from operating regime point of view. The high sensitivity has been recorded in subthermionic subthreshold swing (SS < 60 mV/dec) regime considering small gas-induced gate work function modulation. In addition, advanced simulations have been performed for the detection of two different types of gases separately and simultaneously, where high-performance has been recorded in terms of sensitivity, selectivity, and electrical behavior. The proposed detection approach, which is viable, innovative, simple, and efficient, can be applied using other types of junctionless tunneling field-effect transistors with emerging channel nanomaterials such as the transition metal dichalcogenides materials. The proposed JLGNRTFET-based multi-gas nanosensor is not limited to two specific gases but can also detect other gases by employing appropriate gate materials in terms of selectivity.

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Section: Nanosensor Structure and Multi-gas Sensing Principlementioning

confidence: 99%

Section: Quantum Simulation Approachmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection

Tamersit,

Kouzou,

Rodriguez

et al. 2024

Nanomaterials

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show abstract

“…These sensors are capable of detecting a wide array of gases due to rich varieties of sensing materials. Similarly, field-effect-transistor (FET) gas sensors exploit the reversible interaction between semiconductive materials and oxidizing gases to detect target analytes. , This interaction alters the work function of the active layer, providing a source of signal. FET gas sensors can generate multiple parameters, including threshold voltage, transconductance, field-effect mobility, and drain current.…”

Section: Overview Of Gas Sensorsmentioning

confidence: 99%

Programmable and Modularized Gas Sensor Integrated by 3D Printing

Zhou,

Zhao,

Xun

et al. 2024

Chem. Rev.

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The rapid advancement of intelligent manufacturing technology has enabled electronic equipment to achieve synergistic design and programmable optimization through computer-aided engineering. Three-dimensional (3D) printing, with the unique characteristics of near-net-shape forming and mold-free fabrication, serves as an effective medium for the materialization of digital designs into usable devices. This methodology is particularly applicable to gas sensors, where performance can be collaboratively optimized by the tailored design of each internal module including composition, microstructure, and architecture. Meanwhile, diverse 3D printing technologies can realize modularized fabrication according to the application requirements. The integration of artificial intelligence software systems further facilitates the output of precise and dependable signals. Simultaneously, the self-learning capabilities of the system also promote programmable optimization for the hardware, fostering continuous improvement of gas sensors for dynamic environments. This review investigates the latest studies on 3D-printed gas sensor devices and relevant components, elucidating the technical features and advantages of different 3D printing processes. A general testing framework for the performance evaluation of customized gas sensors is proposed. Additionally, it highlights the superiority and challenges of programmable and modularized gas sensors, providing a comprehensive reference for material adjustments, structure design, and process modifications for advanced gas sensor devices.

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“…In order to improve the sensitivity of FET sensors, the channel is usually functionalized with highly conductive materials. rGO with high charge mobility, tunable ambipolar field-effect characteristics and biocompatibility [23] is probably a very promising material for improving performances of FET biosensors [24][25][26].…”

Section: Introductionmentioning

confidence: 99%

Liquid-gated Field-effect-transistor Based on Chemically Reduced Graphene Oxide for Sensing Neurotransmitter Acetylthiocholine

Nguyen

Vu²

2022

Comm. in Phys.

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In this work, an enzymatic liquid-gated field-effect-transistor sensor based on chemically reduced graphene oxide film was develop for determination of acetylthiocholine in aqueous conditions. The device was designed with interdigitated electrode configuration and then manufactured by combining lithography and chemical vapor deposition techniques in clean room. Graphene oxide material (prepared by Hummer method) was chemically reduced using a strong reducing agent hydrazine, and then drop-casted onto the channel region. The results have demonstrated a successful reduction of graphene oxide with clearly shifting of 02 characteristic peaks comparing with graphene oxide. Consequently, the transfer curve of as-prepared reduced graphene oxide based transistor exhibits ambipolar characteristics with a V-shape. Acetylcholinesterase was immobilized on top of reduced graphene oxide film with the aid of glutaraldehyde trapping agent. It was found that the release of proton from enzymatic hydrolysis of acetylthiocholine has caused significant variation in charge concentration and mobility in the channel, thus generated a significant blue shift in position of Dirac point on ambipolar curve. The developed sensor exhibits good sensing performances with LOD of 250 µM in concentration range 0 – 0.8 mM.

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Fabrication Strategies and Measurement Techniques for Performance Improvement of Graphene/Graphene Derivative Based FET Gas Sensor Devices: A Review

Cited by 13 publications

References 62 publications

Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection

Electrostatically Doped Junctionless Graphene Nanoribbon Tunnel Field-Effect Transistor for High-Performance Gas Sensing Applications: Leveraging Doping Gates for Multi-Gas Detection

Programmable and Modularized Gas Sensor Integrated by 3D Printing

Liquid-gated Field-effect-transistor Based on Chemically Reduced Graphene Oxide for Sensing Neurotransmitter Acetylthiocholine

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