“…With applications in such diverse fields as radiological coatings, optics, and microelectronics, deposition of zirconium nitrides (ZrN, Zr 3 N 4 ) at low temperatures (<500 • C) and with a low halide contamination have been of interest [123]. To that end, research has been reported for the deposition of ZrN from zirconium amido complexes, such as tetrakis(diethylamino)zirconium (Zr(NEt 2 ) 4 ) [64,123,[127][128][129]151,152], tetrakis(dimethylamino) zirconium (Zr(NMe 2 ) 4 ) [128][129][130][131]152,153], and tetrakis(ethylmethylamino)zirconium (Zr(NEtMe) 4 ) [129,152]. Deposition of ZrN from these organometallic precursors can be accomplished as a single-source precursor (e.g., Zr(NMe 2 ) 4 alone) [127][128][129][130][131]151] or in the presence of ammonia [123,129,152,153], nitrogen, or hydrogen [128].…”