2009
DOI: 10.1039/b904993b
|View full text |Cite
|
Sign up to set email alerts
|

Fabrication of ZnO/CdS core/shell nanowire arrays for efficient solar energy conversion

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

10
294
3

Year Published

2010
2010
2021
2021

Publication Types

Select...
8
2

Relationship

0
10

Authors

Journals

citations
Cited by 394 publications
(307 citation statements)
references
References 28 publications
(27 reference statements)
10
294
3
Order By: Relevance
“…58(a), the surface photovoltage increased with increasing loading of CdS quantum dots on ZnO nanowires [472]. Following this strategy, quantum dots sporadically dispersed on the nanowire were replaced with core-shell structures of different materials, such as CdS [475], CdSe [211,212], and CdTe [213,476], to further enhance the device efficiency. Electron-hole pairs are generated when incident photons are absorbed by the quantum dots.…”
Section: Quantum Dot-sensitized Solar Cellsmentioning
confidence: 99%
“…58(a), the surface photovoltage increased with increasing loading of CdS quantum dots on ZnO nanowires [472]. Following this strategy, quantum dots sporadically dispersed on the nanowire were replaced with core-shell structures of different materials, such as CdS [475], CdSe [211,212], and CdTe [213,476], to further enhance the device efficiency. Electron-hole pairs are generated when incident photons are absorbed by the quantum dots.…”
Section: Quantum Dot-sensitized Solar Cellsmentioning
confidence: 99%
“…For instance, transition metals as well as nitrogen and carbon have been used as dopants to reduce their bandgap energy for enhancing visible light absorption [10,[13][14][15][16][17]. Alternatively, organic dyes and inorganic QDs have been utilized as visible light absorbers to sensitize the metal oxides [18,19].…”
Section: Introductionmentioning
confidence: 99%
“…To date, the reported type-II heterostructures are mainly based on II-VI and III-V binary semiconductors, such as ZnO/ZnS [41], ZnO/ZnSe [42], ZnO/ZnTe [23], CdSe/CdTe [43], and GaN/GaP [20], as shown in Table 1. Among them, ZnO-based heterostructures attracted more attentions due to its abundant resources and facilitating growth [44].…”
Section: Theoretical Design Of Type-ii Heterostructuresmentioning
confidence: 99%