Fabrication of ZnO and its enhancement of charge injection and transport in hybrid organic/inorganic light emitting devices

Structural, optical and electrical properties of F-doped ZnO nanorod semiconductor thin films deposited by sol–gel process

“…Among the II-VI semiconductors, ZnO is an important optoelectronic device material for use in the violet and blue regions because of its wide band gap (3.37 eV) and large exciton binding energy (60 meV). ZnO thin films are promising candidates for applications in short-wavelength light-emitting devices [1], fieldemission devices [2], solar cells [3], and sensors [4].…”

Optical properties of Zn1−x Al x O:NiO transparent metal oxide composite thin films prepared by sol–gel method

“…ZnO is a wide band gap semiconductor material, with direct band gap 3.37 eV at 300 K and large exciton binding energy 60 meV. The versatile properties of ZnO such as high electrical conductivity, high infrared reflectance, high visible transmittance, piezoelectricity, chemical stability, low resistivity, abundance in nature, easy fabrication and biocompatibility make it useful in the field of solar cells [1], gas sensors [2], photodetectors [3], light-emitting diodes [4], thin film transistor [5], piezoelectric devices [6], varistors [7] and surface acoustic-wave devices [8] etc.…”

Room temperature liquefied petroleum gas (LPG) sensor

“…To meet the requirements for analyzing LPG and other poisoning species, to improve the stability and selectivity and to lower fabrication costs, conducting polymers in the form of thin films, blends, or heterojunctions have been developed and have shown great potential to enhance its sensitive characteristics. A considerable interest in the fabrication of ZnO/organic hybrid structure has also been developed for solar cell, photodiode, photovoltaic and photoelectrochemical applications [17][18][19][20]. Polyaniline (PANI) is potential p-type semiconducting material for use in junction devices [21,22].…”