Fabrication of zinc oxide/ polyaniline (ZnO/PANI) heterojunction and its characterisation at room temperature

Singh, Naorem Santakrus; Kumar, Lalit; Kumar, Amit; Vaisakh, S.; Singh, Saurabh; Sisodiya, Kunal; Sashank, Srivastava; Kansal, Mansha; Suyash, Rawat; Singh, Th. Anil; Tanya,; Anita, Anita

doi:10.1016/j.mssp.2016.12.021

Cited by 32 publications

(16 citation statements)

References 29 publications

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“…The η were found to be 3.04, 3.34, 3.54 and 3.02 for reference sample (without ammonia), 2, 4 and 6 ml of ammonia, respectively. The obtained values of η were found to be higher than 1 for ideal diode which could be due to a number of factors such as series resistance, surface and interface states and non-uniformity distribution of the interfacial charges and voltage drop across the M/S junction [42]. The  B0 obtained from the fit were 0.75 for reference sample, 0.74 for 2 ml, 0.72 for 4 ml and 0.70 for 6 ml of ammonia.…”

mentioning

confidence: 86%

Influence of ammonia concentration on the microstructure, electrical and raman properties of low temperature chemical bath deposited ZnO nanorods

Mwankemwa

Nambala

Kyeyune

et al. 2017

Materials Science in Semiconductor Processing

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Nanostructured zinc oxide synthesized using an easy and low temperature chemical bath deposition method are among the most promising low cost semiconducting nanostructures investigated for a variety of applications. We successfully report the effects of ammonia solution in the growth of ZnO nanorods at a temperature of 60 °C. Successive addition of ammonia altered the degree of supersaturation of the growth solution, causing a significant deviation in the morphology and crystal orientation of ZnO nanorods. Field emission scanning Electron Microscopy images revealed changes in surface morphology of ZnO nanorods with respect to addition of specific amounts of ammonia. X-ray diffraction analysis revealed wurtzite crystal structure of ZnO which was further further supported by X-ray photoelectron studies, optical absorbance and Raman spectra that also revealed the existence of wurtzite ZnO. The current-voltage measurement showed the electrical properties of the synthesized ZnO nanorods. The vertically grown nanorods with flat tops, effect more rectifying Schottky contacts to be realized on comparison to needle like structures.

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mentioning

confidence: 86%

Influence of ammonia concentration on the microstructure, electrical and raman properties of low temperature chemical bath deposited ZnO nanorods

Mwankemwa

Nambala

Kyeyune

et al. 2017

Materials Science in Semiconductor Processing

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“…The n values obtained from the fit were 4.8 and 2.5 for undoped and Sm doped ZnO nanorods at 1.5 %, respectively. These values are higher compared to ideal diode (n = 1) which could be attributed to some reasons such as series resistance, voltage drop across the metal semiconductor junction, surface and interface states [65]. Furthermore, Schottky diodes fabricated using chemical solutions in air can induce interfacial dielectric layers that affect the current transport across the diode [66].…”

Section: Electrical Characterizationmentioning

confidence: 99%

Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

Ahmed

Mwankemwa

Carleschi

et al. 2018

Materials Science in Semiconductor Processing

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In this study, pure and Sm doped ZnO nanorods from 0.0 to 5.5 at.% were synthesized using the chemical bath deposition method at 90 • C. The effect of Sm doping of ZnO nanorods on their structural, morphology and optical properties were investigated. X-ray diffraction patterns revealed that Sm had been successfully incorporated into the ZnO lattice and no other impurities or Sm oxide phases were detected. Field emission scanning electron microscopy images showed that the growth rate of the nanorods was suppressed by Sm doping. Room temperature Raman scattering spectroscopy revealed that the relative intensity of E 2 (high) mode decreased and shifted slightly towards a lower wavenumber in Sm doped ZnO when compared to the undoped ZnO nanorods. The photoluminescence spectrum of as-synthesized Sm-doped samples measured at room temperature shows that the UV emission is slightly red shifted and the green-yellow emission of the visible emission is enhanced, when compared to undoped samples. Photoluminescence studies also revealed the good crystal quality of the as-synthesized samples as all sample shows strong ultraviolet and weak deep-level emission peaks. The as-synthesized samples were also characterized using X-ray photoelectron spectroscopy that revealed the presence of Zn and O in all samples and a small amount of Sm in 5.5 at.% Sm doped ZnO was detected. Furthermore, the current-voltage characteristics of a fabricated Schottky diodes showed a good rectifying behavior when ZnO doped with Sm at 1.5 at.%. The obtained Schottky barrier height for pure and Sm doped ZnO nanorods were 0.55 eV and 0.72 eV, respectively.

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“…where J 0 is reverse saturation current density, 29 q is the electronic charge, k is the Boltzmann constant, and T is temperature in degrees Kelvin. 30 From Eq. (1), the value of g is calculated from the slope of the straight-line region of the forward bias ln (J) versus V plot as 28…”

Section: Electronic Characteristics Of Diodesmentioning

confidence: 99%

“…14,15 A number of research papers have demonstrated the fabrication and junction characteristics of indium tin oxide (ITO)/PANI/metal diode systems. [16][17][18][19] ITO coated glass is usually used as an electron injection contact, while PANI is a low work function polymer that enables hole injection to the electrode. This structure produces a Schottky-type diode with a relatively high barrier height (U B ).…”

Section: Introductionmentioning

confidence: 99%

Effect of Acid Doping on Junction Characteristics of ITO/Polyaniline/N719/Ag Diode

Reza

Steky

Suendo

2020

Journal of Elec Materi

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In this paper, we demonstrate the fabrication and electrical characterization of a heterojunction Schottky diode between polyaniline (PANI) and a ruthenium-based organic semiconductor (N719). In this system, PANI behaves as an organic p-type conducting polymer while N719 acts as an n-type semiconductor. The fabrication was carried out using different methods to deposit each component: solution casting for PANI, spray coating for N719, and screen-printing for silver paste. The PANI film was doped by soaking it in HCl solutions of different concentrations to form emeraldine salt, i.e., a conductive type of PANI. Electrical characterizations of PANI and the diode were performed using conductivity and current density-voltage (J-V) measurements. The maximum conductivity of PANI was obtained at 3.18 9 10 À2 S/cm using an HCl concentration of 1 M. The fabricated diode exhibited a low Schottky barrier (U B = 0.48 eV) and rectifying behavior (c $ 9) with moderate ideality factor (g $ 8). Acid doping of PANI caused better diode performance and an increase in current density by four orders of magnitude.

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Fabrication of zinc oxide/ polyaniline (ZnO/PANI) heterojunction and its characterisation at room temperature

Cited by 32 publications

References 29 publications

Influence of ammonia concentration on the microstructure, electrical and raman properties of low temperature chemical bath deposited ZnO nanorods

Influence of ammonia concentration on the microstructure, electrical and raman properties of low temperature chemical bath deposited ZnO nanorods

Effect of Sm doping ZnO nanorods on structural optical and electrical properties of Schottky diodes prepared by chemical bath deposition

Effect of Acid Doping on Junction Characteristics of ITO/Polyaniline/N719/Ag Diode

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