Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer

Yu, Yang; Fong, W.K.; Wang, Shifeng; Surya, C.

doi:10.1038/srep37833

Cited by 37 publications

(26 citation statements)

References 39 publications

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“…The lattice constants are obtained as = 3.73Å, = 3.73Å, and = 9.37Å, respectively. Nano-TiO 2 in anatase phase, belonging to the wide band gap semiconductor materials [17][18][19], is extensively applied to the photocatalysis field, also because of its inexpensive, abundant, and nontoxic constituent elements [14,20,21]. It is obviously seen that the lower spectrum is a superposition of the upper and middle ones, implying the micrometer-or submicrometer-sized marble powder surface is sufficiently modified with the nano-TiO 2 .…”

Section: Characterizations and Testsmentioning

confidence: 99%

Making Marble Powder Waste Profitable by Using Nano-TiO₂ Surface Modification for Air Quality Improvement Applications

Rong

Zhong

et al. 2017

Journal of Nanomaterials

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We report a brand new recycling route of waste marble powder, by means of surface modification with homemade nano-TiO 2 particles to produce low cost coating materials for the application in air quality improvement. The as-prepared nano-TiO 2 in anatase phase exhibits excellent photocatalytic characteristic, reflected by the high degradation rate of over 95% of methylene blue within 6 hours of UV irradiation. The prepared coating consisting of nano-TiO 2 clad marble powder was tested by monitoring the decomposition rate of formaldehyde gas. A high degradation efficiency of about 95% within 9 hours of illumination is achieved, demonstrating a promising potential for removing the harmful and toxic organic pollutants in air while applying this coating in buildings both interiorly and exteriorly.

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Section: Characterizations and Testsmentioning

confidence: 99%

Making Marble Powder Waste Profitable by Using Nano-TiO₂ Surface Modification for Air Quality Improvement Applications

Rong

Zhong

et al. 2017

Journal of Nanomaterials

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“…This work show that single step magnetron sputtering WS 2 /p-Si heterojunction has great importance for heterojunction based future nanoelectronic devices. [31]. In another study, WS 2 /GaN heterojunction was manufactured for UV detection [32].…”

Section: Introductionmentioning

confidence: 99%

Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†

Acar¹,

Mobtakeri²,

Ertuğrul³

et al. 2021

Hittite J. Sci. Eng.

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T he excellent electronic properties of the various two-dimensional (2D) materials have led to new developments for the nanoelectronic devices after discovering of the graphene. Heterostructures created by using 2D and 3D materials are becoming one of the main research area for the nanoelectronic devices in recent years [1]. TMDCs such as WS 2 , MoS 2 , MoSe 2 , and WSe 2 have adjustable bandgaps to be indirect in their bulk form and direct in the monolayer [2]. This feature has potential in various electronic and optical applications for TMDCs [3]. Structurally, WS 2 has a crystal structure consisting of S-W-S sandwich layers and the atoms in the layers are packaged hexagonally [4]. These layers are held together by the weak van der Waals (vdW) forces so WS 2 can easily be converted into a single layer form [5]. Because of these significant features, WS 2 has become a good candidate for the new generation micro and nanoelectronics [6]. Unlike the graphene, the WS 2 has a direct band gap semiconductor with a gap of 2.1 eV in single layer form while as the material passes into a bulk form, the gap is direct in the size of 1.3 eV [7]. The presence of this bandgap made it possible to produce WS 2 transistors with a 10 8 on/off ratio and high sensitivity photo detectors [8].

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“…At the same time, the heterostructure formed by stacking the special two‐dimensional material graphene and layered WS 2 also exhibits unique physical properties . Yang et al used a chemical deposition method to directly grow WS 2 thin films on n ‐type GaN layers for system research and found that they effectively reduced the leakage current density; Iqbal et al developed a method for high‐quality and durable monolayer transition metal compound devices. A monolayer WS 2 field effect transistor (SL‐WS 2 ‐FET) between chemically vapor deposited hexagonal boron nitride (h‐BN) films exhibited high fluidity at room temperature and significantly improved electrical properties .…”

Section: Introductionmentioning

confidence: 99%

Effect on Schottky Barrier of Graphene/WS₂ Heterostructure With Vertical Electric Field and Biaxial Strain

Zheng

et al. 2019

Physica Status Solidi (b)

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Graphene has been widely used in many applications, such as sensors, fieldeffect transistors, and integrated circuits due to its high strength and excellent electrical and thermal conductivity. Its lack of a band gap, however, means that applications in some fields are limited. In this paper, using first principles calculations based on the density functional theory method, the electronic properties of graphene/WS 2 heterostructures under electric field and in-plane biaxial strain are investigated. It is found that the two materials are subject to weak van der Waals forces after stacking. The band gap of WS 2 in the graphene/WS 2 heterostructure is reduced by 0.57 eV compared to the intrinsic WS 2 band gap. An n-type Schottky contact with a barrier height of 0.22 eV is formed. In addition, an n-type to p-type Schottky contact transition can be achieved by increasing the applied vertical electric field on the graphene/WS 2 heterostructure. The variation of the barrier heights ϕ Bn and ϕ Bp of the graphene/WS 2 heterojunction with strain is sensitive. However, plane strain can only change the height of the Schottky barrier; the Schottky contact cannot change from n-type to p-type with in-plane biaxial strain. The results suggest that there is a potential application of graphene/ WS 2 heterostructures in Schottky devices.

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Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer

Cited by 37 publications

References 39 publications

Making Marble Powder Waste Profitable by Using Nano-TiO₂ Surface Modification for Air Quality Improvement Applications

Making Marble Powder Waste Profitable by Using Nano-TiO₂ Surface Modification for Air Quality Improvement Applications

Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†

Effect on Schottky Barrier of Graphene/WS₂ Heterostructure With Vertical Electric Field and Biaxial Strain

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Fabrication of WS2/GaN p-n Junction by Wafer-Scale WS2 Thin Film Transfer

Cited by 37 publications

References 39 publications

Making Marble Powder Waste Profitable by Using Nano-TiO2 Surface Modification for Air Quality Improvement Applications

Making Marble Powder Waste Profitable by Using Nano-TiO2 Surface Modification for Air Quality Improvement Applications

Fabrication and Analysis Of 2D/3D Heterojunction Between Continuous Few-layer WS2 Film and Si (100)†

Effect on Schottky Barrier of Graphene/WS2 Heterostructure With Vertical Electric Field and Biaxial Strain

Contact Info

Product

Resources

About

Making Marble Powder Waste Profitable by Using Nano-TiO₂ Surface Modification for Air Quality Improvement Applications

Making Marble Powder Waste Profitable by Using Nano-TiO₂ Surface Modification for Air Quality Improvement Applications

Effect on Schottky Barrier of Graphene/WS₂ Heterostructure With Vertical Electric Field and Biaxial Strain