Fabrication of wide-gap Cu(In1−xGax)Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness

Ishizuka, Shogo; Sakurai, Katsutoshi; Yamada, A.; Matsubara, Koji; Fons, Paul; Iwata, K.; Nakamura, S. N.; Kimura, Yasuyuki; Baba, Takashi; Nakanishi, H.; Kojima, Takeshi; Niki, Shigeru

doi:10.1016/j.solmat.2004.08.017

Cited by 110 publications

(66 citation statements)

References 9 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The resistivity of ZnO films can be further reduced by intentional doping. It has been reported that substituting Al atoms in a ZnO crystal lattice can not only lower the electrical resistivity, but can also increase the optical band gap [15,16]. Therefore, in this study, we incorporated Aldoped ZnO (AZO) layers into an inverted OPV with two different active layers: poly-3-hexylthiophene with [6.6]-phenyl-C61-butyric acid methyl-ester (P3HT:PCBM) and PBDTTT-C-T mixed with (6,6)-phenyl-C 71 -butyric acid methyl ester (PC 71 BM).…”

Section: Introductionmentioning

confidence: 99%

Highly stable inverted organic photovoltaics using aluminum-doped zinc oxide as electron transport layers

Chen

Kuo

Lin

et al. 2015

Journal of Power Sources

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Highly stable inverted organic photovoltaics using aluminum-doped zinc oxide as electron transport layers

Chen

Kuo

Lin

et al. 2015

Journal of Power Sources

View full text Add to dashboard Cite

“…CIGS film was grown by a three-stage process using a molecular beam epitaxy (MBE) system. 26 The [Ga]/[In+Ga] ratio of the CIGS sample has been found to be ∼ 0.30 which is also estimated by EPMA. All of these measurements of EL, TRPL and temperature dependent V OC were performed on the solar cell structures.…”

Section: Methodsmentioning

confidence: 63%

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

et al. 2016

View full text Add to dashboard Cite

A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se)4 (CZTSSe) and the CuInGaSe2 (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

show abstract

“…The structures are similar to their isoelectronic II-VI binary analogues (zincblende ZnS for example), [23,24] from which the chalcopyrite structure can be derived by replacing the single-type cation with two types of cations in an alternating order -one of lower (A) and one of higher (B) valence. Further substitution of the trivalent cation has also yielded successful devices, as for the indium-free kesterite-type Cu 2 ZnSnS 4 .…”

Section: Chalcopyrite-based Absorber Materials and Devicesmentioning

confidence: 94%

“…[21,22] In order to prevent leakage current due to defects in the previous layers, the TCO is often preceded by a thinner nominally insulating ZnO layer. [23] Figure 1. General structure of a high-performance chalcopyrite (e.g., CIGS) device.…”

Section: Thin-film Pv Device Structurementioning

confidence: 99%

Direct Liquid Coating of Chalcopyrite Light‐Absorbing Layers for Photovoltaic Devices

Todorov¹,

Mitzi²

2009

Eur J Inorg Chem

221

160

View full text Add to dashboard Cite

Liquid deposition approaches for chalcopyrite films used in thin-film photovoltaic devices are reviewed. Most of the targeted materials are based on Cu-In or Cu-In-Ga sulfides and selenides (i.e., CIS or CIGS, respectively), although recently related alternative materials based on abundant and nontoxic elements such as the kesterite Cu 2 ZnSnS 4 have been actively investigated. By direct liquid coating we refer collectively to a variety of techniques characterized by distributing a liquid or a paste to the surface of a substrate, followed by necessary thermal/chemical treatments to achieve the desired phase. The deposition media used are solutions or particle (usually submicrometer size) suspensions of metal oxide, organic and inorganic compounds, including metal chalcogenide species. The deposition techniques used are mainly printing and spin-coating, although any standard process such as

show abstract

Fabrication of wide-gap Cu(In1−xGax)Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness

Cited by 110 publications

References 9 publications

Highly stable inverted organic photovoltaics using aluminum-doped zinc oxide as electron transport layers

Highly stable inverted organic photovoltaics using aluminum-doped zinc oxide as electron transport layers

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

Direct Liquid Coating of Chalcopyrite Light‐Absorbing Layers for Photovoltaic Devices

Contact Info

Product

Resources

About