Fabrication of wafer-scale polystyrene photonic crystal multilayers via the layer-by-layer scooping transfer technique

Oh, Jeong Rok; Moon, Jung Ho; Yoon, Sungho; Park, Chan Ryang; Rag, Young

doi:10.1039/c1jm11122a

Cited by 87 publications

(79 citation statements)

References 37 publications

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“…Before patterning a solution was made up of the silica spheres in ethanol at 10 % w/v and chloroform at a ratio of 2:3 and stirred for 30 min. This mixture was then introduced to the surface of a trough of water by a glass dropper with the film already submerged as previously described by Oh et al 23 The glass trough was then lowered mechanically allowing the selfassembly of the silica particles onto the emerging wafer piece. Chlorine based inductively coupled plasma ICP dry etching was used to transfer the pattern into the underlying AlN film forming the structures shown in Figure 1 (d).…”

Section: Methodsmentioning

confidence: 99%

Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods

Conroy

Zubialevich

et al. 2015

J. Mater. Chem. C

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We report an inexpensive nanoscale patterning process for epitaxial lateral overgrowth (ELOG) in AlN layers grown by metal organic vapour phase epitaxy (MOVPE) on sapphire. The pattern was produced by an inductively coupled plasma etch using a self-assembled monolayer of silica spheres on AlN as the lithographic mask. The resulting uniform 1 [small mu ]m length rod structure across a wafer showed a massive reduction in threading dislocations (TDs) when annealed at 1100 [degree]C. Overgrowing homoepitaxial AlN on top of the nanorods, at a temperature of 1100 [degree]C, produced a crack free coalesced film with approximately 4 [small mu ]m of growth, which is formed at a much lower temperature compared to that typically required for microscale ELOG. The improved crystal quality, in terms of TD reduction, of the AlN above the rods was determined by detailed weak beam (WB) electron microscopy studies and showed that the threading dislocation density (TDD) was greatly reduced, by approximately two orders of magnitude in the case for edge-type dislocations. In situ reflectance measurements during the overgrowth allowed for thickness coalescence to be estimated along with wafer curvature changes. The in situ measurements also confirmed that tensile strain built up at a much slower rate in the ELOG AlN layer compared to that of AlN prepared directly on sapphire

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Section: Methodsmentioning

confidence: 99%

Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods

Conroy

Zubialevich

et al. 2015

J. Mater. Chem. C

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show abstract

“…Before patterning a solution was made up of the silica spheres in ethanol at 10% w/v and chloroform at a ratio of 2:3 and stirred for 30 min. This mixture was then introduced to the surface of a trough of water by a glass dropper with an AlN/sapphire wafer already submerged as previously described by Oh et al 31 The glass trough was then lowered mechanically allowing the self-assembly of the silica particles on the emerging wafer piece, photograph in Supporting Information Figure S1. A chlorine based inductively coupled plasma ICP dry etch (etch recipe details can be found in the supporting information) was used to transfer the pattern into the underlying AlN film forming the structures using Oxford Instruments Plasmalab 100 model.…”

Section: Nanosphere Lithographymentioning

confidence: 99%

Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach

Conroy

Zubialevich²,

Li³

et al. 2016

ACS Nano

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“…Before patterning a solution was made up of the silica spheres in ethanol at 10% w/v and chloroform at a ratio of 2:3 and stirred for 30 min. This mixture was then introduced to the surface of a trough of water by a glass dropper with the GaN/AlN/Al2O3 wafer already submerged as previously described by Oh et al 47 The glass trough was then lowered mechanically allowing the self-assembly of the silica particles on the emerging wafer piece. To space out the silica sphere pattern a CF4 based inductively coupled plasma (ICP) dry etch (CF4 12 sccm, CHF3 28 sccm, 2.5 mT, 800W ICP, 75W RF) was used.…”

Section: Nanosphere Lithographymentioning

confidence: 99%

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

Conroy¹,

Kusch

et al. 2016

Nanoscale

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We report a method of growing site controlled InGaN multiple quantum discs (QDs) at uniform wafer scale on coalescence free ultra-high density (>80%) nanorod templates by metal organic chemical vapour deposition (MOCVD). The dislocation and coalescence free nature of the GaN space filling nanorod arrays eliminates the well-known emission problems seen in InGaN based visible light sources that these types of crystallographic defects cause. Correlative scanning transmission electron microscopy (STEM), energy-dispersive X-ray (EDX) mapping and cathodoluminescence (CL) hyperspectral imaging illustrates the controlled site selection of the red, yellow and green (RYG) emission at these nano tips. This article reveals that the nanorod tips' broad emission in the RYG visible range is in fact achieved by manipulating the InGaN QD's confinement dimensions, rather than significantly increasing the In%. This article details the easily controlled method of manipulating the QDs dimensions producing high crystal quality InGaN without complicated growth conditions needed for strain relaxation and alloy compositional changes seen for bulk planar GaN templates

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Fabrication of wafer-scale polystyrene photonic crystal multilayers via the layer-by-layer scooping transfer technique

Cited by 87 publications

References 37 publications

Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods

Epitaxial lateral overgrowth of AlN on self-assembled patterned nanorods

Ultra-High-Density Arrays of Defect-Free AlN Nanorods: A “Space-Filling” Approach

Site controlled red-yellow-green light emitting InGaN quantum discs on nano-tipped GaN rods

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