Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Thomson, Stephen R. D.; Perron, Justin K.; Kimball, Mark O.; Mehta, S.; Gasparini, Francis M.

doi:10.3791/51179-v

Cited by 2 publications

(2 citation statements)

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“…This allows three-dimensional (3D) analysis and evaluation of pore segmentation capability, which will be demonstrated in this study. High temperature direct bonding has previously been demonstrated [8,9], which requires annealing temperatures above 1000 °C. In our study, we implemented a low temperature (≈ 400 °C) direct bonding [10,11].…”

Section: Lithography With Driementioning

confidence: 99%

Investigation of manufacturing techniques to develop X-ray computed tomography phantoms with controlled flaws for reliability assessment

Kim

Robinson

Klimov

et al. 2023

8th International Workshop on Reliability of NDT/NDE

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Various micro and nano-manufacturing techniques were investigated to create controlled flaws for x-ray computed tomography (XCT) phantoms. We explored the use of focused ion beam, laser micromachining, and projection photolithography with deep reactive ion etching to generate controlled pores from 100s of micrometers to a few micrometers in size. Principles of each technique, fabrication results, and the calibration processes for the manufactured pores are discussed, as well as possible assembly techniques for building up larger pore-containing structure and initial results for such assemblies. Example scanning electron microscope and XCT measurements of the phantoms are shown.

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Section: Lithography With Driementioning

confidence: 99%

Investigation of manufacturing techniques to develop X-ray computed tomography phantoms with controlled flaws for reliability assessment

Kim

Robinson

Klimov

et al. 2023

8th International Workshop on Reliability of NDT/NDE

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“…The wafer bonding involves a two-step process whereby first a weak bond is achieved at room temperature, which allows one to examine via infrared imaging the quality and uniformity of the enclosure, and then a high-temperature annealing at one atmosphere of differential pressure between the inside and outside of the two-wafer cell. This results in a strong chemical bond at the interface between the wafers (Rhee et al 1990, Thomson et al 2014. Typically this is at the Si-SiO 2 interface, but also at times at the SiO 2 -SiO 2 interface.…”

Section: Measurement Techniquesmentioning

confidence: 99%

A review of giant correlation-length effects via proximity and weak-links coupling in a critical system: ⁴He near the superfluid transition

2019

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We review measurements of 4 He near the superfluid transition in arrangements whereby an array of weak links couple relatively larger, more bulk-like 4 He regions. In contrast to experiments which focus on the dependence of the superflow on the chemical potential difference across the links, these studies focus on the specific heat of both the weak links and that of the larger coupled regions, as well as the behavior of the superfluid fraction within the weak links. The data show unexpected results which reflect a very long range coupling as well as modification of the weak link itself due to the proximity to bulk-like helium. One finds that while the three-dimensional correlation length ξ(t), where t = |1 − T/T λ |, is involved in these long-range effects, the distance over which these can be seen is of the order of 100 to 1000 times ξ(t). These results call into question our understanding of the meaning of the correlation length at a critical point as the 'range' over which information can propagate. These studies are the first to measure the thermodynamic properties of weak links for a critical system where fluctuations are important. They differ in essential ways with expectations from mean-field considerations. We compare results with other 4 He measurements, with superconductors and the theoretical calculations of the Ising model.

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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Cited by 2 publications

References 0 publications

Investigation of manufacturing techniques to develop X-ray computed tomography phantoms with controlled flaws for reliability assessment

Investigation of manufacturing techniques to develop X-ray computed tomography phantoms with controlled flaws for reliability assessment

A review of giant correlation-length effects via proximity and weak-links coupling in a critical system: ⁴He near the superfluid transition

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Fabrication of Uniform Nanoscale Cavities via Silicon Direct Wafer Bonding

Cited by 2 publications

References 0 publications

Investigation of manufacturing techniques to develop X-ray computed tomography phantoms with controlled flaws for reliability assessment

Investigation of manufacturing techniques to develop X-ray computed tomography phantoms with controlled flaws for reliability assessment

A review of giant correlation-length effects via proximity and weak-links coupling in a critical system: 4He near the superfluid transition

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A review of giant correlation-length effects via proximity and weak-links coupling in a critical system: ⁴He near the superfluid transition