Fabrication of undoped ZnO thin film via photosensitive sol–gel method and its applications for an electron transport layer of organic solar cells

Luong, Chi Hieu; Kim, Sarah; Surabhi, Srivathsava; Vo, Thanh Son; Lee, Kyung-Min; Yoon, Soon‐Gil; Jeong, Jun‐Ho; Choi, Jun-Hyuk; Jeong, Jong‐Ryul

doi:10.1016/j.apsusc.2015.05.170

Cited by 22 publications

(3 citation statements)

References 20 publications

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“…The precursor solution used consisted of 0.1 M zinc acetate dihydrate and 0.1 M monoethanolamine in 2-methoxyethanol. 30) Acetic acid and titanium were added as dopants to the ZnO solution while keeping the molar ratio of the Ti dopant at 0.003 g=ml. As light enters from the ITO side, the transmittance of TZO becomes important in realizing a high current density.…”

Section: Methodsmentioning

confidence: 99%

Efficiency enhancement of solution-processed inverted organic solar cells with a carbon-nanotube-doped active layer

Lin¹,

Su²,

Yeh³

et al. 2015

Jpn. J. Appl. Phys.

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Solution-processed titanium-doped ZnO (TZO) is synthesized by the sol–gel method to be the electron-transporting layer (ETL) in an inverted organic solar cell (IOSC). Carbon nanotubes (CNTs) are doped into an active layer of poly(3-hexylthiophene):[6,6]-phenyl C 61 butyric acid methyl ester (P3HT:PCBM). The addition of CNTs in the P3HT:PCBM composite increases the conjugation length of P3HT:PCBM:CNTs, which simultaneously enhances the capacity of the composite to absorb solar energy radiation. Vanadium oxide (V2O5) was spin-coated onto the active layer to be a hole-transporting layer (HTL). The power conversion efficiency (PCE) results indicate that the V2O5 nanobelt structure possesses better phase separation and provides a more efficient surface area for the P3HT:PCBM:CNT active layer to increase photocurrent. The optimized IOSCs exhibited an open circuit voltage (V oc), a short-circuit current density (J sc), a fill factor (FF), and a PCE of 0.55 V, 6.50 mA/cm2, 58.34%, and 2.20%, respectively, under simulated AM1.5G illumination of 100 mW/cm2.

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Section: Methodsmentioning

confidence: 99%

Efficiency enhancement of solution-processed inverted organic solar cells with a carbon-nanotube-doped active layer

Lin¹,

Su²,

Yeh³

et al. 2015

Jpn. J. Appl. Phys.

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“…[24][25][26][27] However, thermal annealing processes at high temperatures (up to 200°C) were applied for securing high electron mobility and good film quality. [28,29] This high-temperature process is a critical drawback in the advantageous roll-to-roll processes using flexible substrates. [30] In this regard, ZnO nanoparticles were introduced as an ECBL, which required a mild thermal annealing process at 100°C because their crystalline nanostructures could be already well made in the synthesis step.…”

Section: Introductionmentioning

confidence: 99%

Performance and Stability of Polymer : Nonfullerene Solar Cells with 100 °C‐Annealed Electron‐Collecting Combination Layers

et al. 2021

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Inverted-type organic solar cells, fabricated with low-temperature-processed combination layers of hybrid electron-collecting buffer layers (ECBLs) consisting of zinc oxide (ZnO) and poly (2-ethyl-2-oxazoline) (PEOz) and additional PEOz interlayers, showed improved performance and stability. The ZnO : PEOz precursor films with various PEOz compositions (0-12 wt %) were prepared and thermally treated at 100°C, leading to the ECBLs on which the PEOz interlayers were subsequently deposited before coating of polymer : nonfullerene bulk hetero-junction layers. Results showed that the power conversion efficiency of solar cells reached approximately 9.38 and 10.11 % (average) in case of the ZnO/PEOz and ZnO : PEOz(6 wt % PEOz)/ PEOz combination layers, respectively, despite the low-temperature thermal annealing process. A continuous irradiation test for 12 h under one sun condition (air mass 1.5G, 100 mW cm À 2 ) disclosed that the devices with the ZnO : PEOz(6 wt % PEOz)/ PEOz combination layers were more stable than those with the ZnO/PEOz layers.

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“…smart windows and flat-panel displays. 5 Among various preparation methods, including sol-gel, 6 pulsed laser deposition 7 17 reported that AZO films annealed at 300 o C in hydrogen possess higher conductivity and attribute it to the desorption of negatively charged oxygen species from the grain boundaries. Akazawa 18 attributes the increase in conductivity of Ga-doped ZnO films after annealed in hydrogen at 450 o C to the reactivation of Ga 3+ donors by hydrogen atoms.…”

Section: Introductionmentioning

confidence: 99%

Influences of defects evolvement on the properties of sputtering deposited ZnO:Al films upon hydrogen annealing

Yin

Shirolkar

et al. 2016

AIP Advances

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Understanding how the defects interact with each other and affect the properties of ZnO:Al films is very important for improving their performance as a transparent conductive oxide (TCO). In the present work, we studied the effects of hydrogen annealing on the structural, optical and electrical properties of ZnO:Al films prepared by magnetron sputtering. High resolution transmission electron microscopy observations reveal that annealing at ∼300 oC induces the formation of partial dislocations (PD) and stacking faults (SF), which disrupt the lattice periodicity leading to decreased grain size. Annealing at temperatures above ∼500 oC can remove the PD and SF, but large number of zinc vacancies will be generated. Our results show that when films are annealed at ∼500 oC, the oxygen-related defects (interstitials Oi, etc.) in the as-grown films can be remarkably removed or converted, which lead to increments in the carrier concentration, mobility, and the transmittance in the visible range. At annealing temperatures above 550 oC, the hydrogen etching effect becomes predominant, and Al donors are deactivated by zinc vacancies. We also find an abnormal endothermic process by thermal analysis and an abnormal increase in the resistivity during heating the sample under hydrogen atmosphere, based on which the interaction of Oi with the defects (mainly Al donors and PD) is discussed. It is also demonstrated that by annealing the as-grown AZO films at ∼500 oC under hydrogen atmosphere, high performance TCO films with a low resistivity of 4.48 × 10−4 Ωcm and high transmittance of above 90% in the visible light are obtained.

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Fabrication of undoped ZnO thin film via photosensitive sol–gel method and its applications for an electron transport layer of organic solar cells

Cited by 22 publications

References 20 publications

Efficiency enhancement of solution-processed inverted organic solar cells with a carbon-nanotube-doped active layer

Efficiency enhancement of solution-processed inverted organic solar cells with a carbon-nanotube-doped active layer

Performance and Stability of Polymer : Nonfullerene Solar Cells with 100 °C‐Annealed Electron‐Collecting Combination Layers

Influences of defects evolvement on the properties of sputtering deposited ZnO:Al films upon hydrogen annealing

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